All MOSFET. GP2M008A060XXX Datasheet

 

GP2M008A060XXX Datasheet and Replacement


   Type Designator: GP2M008A060XXX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-252 TO-251
 

 GP2M008A060XXX substitution

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GP2M008A060XXX Datasheet (PDF)

 ..1. Size:522K  globalpower
 gp2m008a060xxx.pdf pdf_icon

GP2M008A060XXX

GP2M008A060CG GP2M008A060PG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 2.1. Size:398K  globalpower
 gp2m008a060xgx.pdf pdf_icon

GP2M008A060XXX

GP2M008A060HGGP2M008A060FG(H)FeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 7.5A

 8.1. Size:416K  globalpower
 gp2m007a065xg.pdf pdf_icon

GP2M008A060XXX

GP2M007A065HGGP2M007A065FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 6.5A

 8.2. Size:366K  globalpower
 gp2m005a050xx.pdf pdf_icon

GP2M008A060XXX

GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A

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Datasheet: GP2M004A065XX , GP2M005A050XG , GP2M005A050XX , GP2M005A060XG , GP2M005A060XXX , GP2M007A065XG , GP2M007A080F , GP2M008A060XGX , IRF4905 , GP2M009A090FG , GP2M009A090NG , GP2M010A060X , GP2M010A065X , GP2M011A090NG , GP2M012A060X , GP2M012A080NG , GP2M013A050F .

History: JMTQ100N03D | IPI80N04S3-03 | NTR2101P | BLL6H1214-500

Keywords - GP2M008A060XXX MOSFET datasheet

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