GP2M008A060XXX Datasheet. Specs and Replacement

Type Designator: GP2M008A060XXX  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-252 TO-251

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GP2M008A060XXX datasheet

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GP2M008A060XXX

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GP2M008A060XXX

GP2M007A065HG GP2M007A065FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A ... See More ⇒

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GP2M005A050HG GP2M005A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A ... See More ⇒

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Detailed specifications: GP2M004A065XX, GP2M005A050XG, GP2M005A050XX, GP2M005A060XG, GP2M005A060XXX, GP2M007A065XG, GP2M007A080F, GP2M008A060XGX, 20N50, GP2M009A090FG, GP2M009A090NG, GP2M010A060X, GP2M010A065X, GP2M011A090NG, GP2M012A060X, GP2M012A080NG, GP2M013A050F

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