GP2M008A060XXX MOSFET. Datasheet pdf. Equivalent
Type Designator: GP2M008A060XXX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 120 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO-252, TO-251
GP2M008A060XXX Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GP2M008A060XXX Datasheet (PDF)
0.1. gp2m008a060xxx.pdf Size:522K _globalpower
GP2M008A060CG GP2M008A060PG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A <1.2W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M008A060CG/GP2M008A060PG D-PAK/I-PAK GP2M008A060CG/GP2M00
2.1. gp2m008a060xgx.pdf Size:398K _globalpower
GP2M008A060HG GP2M008A060FG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A <1.2 Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance Device Package Marking Remark GP1M008A050HG/GP1M008A050FG GP1M008A050HG/GP1M008A050FG TO-220 / TO-220F RoHS GP1M008
8.1. gp2m004a060xx.pdf Size:419K _globalpower
GP2M004A060HG GP2M004A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A < 2.5 Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance Device Package Marking Remark GP2M004A060HG TO-220 GP2M004A060HG RoHS GP2M004A060FG TO-220F GP2M004A060FG RoHS Absolu
8.2. gp2m009a090fg.pdf Size:240K _globalpower
GP2M009A090FG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge Improved dv/dt capability 900V 9A <1.4 Improved ESD performance RoHS compliant JEDEC Qualification TO-220F Top view Ordering Part Number Package Marking Remark GP2M009A090FG TO-220F GP2M009A090FG RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 900
8.3. gp2m002a060xg.pdf Size:405K _globalpower
GP2M002A060HG GP2M002A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A < 4.0 Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance Device Package Marking Remark GP2M002A060HG TO-220 GP2M002A060HG RoHS GP2M002A060FG TO-220F GP2M002A060FG RoHS Absolu
8.4. gp2m004a060xg.pdf Size:514K _globalpower
GP2M004A060CG GP2M004A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.0A < 2.5W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M004A060CG D-PAK GP2M004A060CG RoHS GP2M004A060PG I-PAK GP2
8.5. gp2m004a065xg.pdf Size:503K _globalpower
GP2M004A065CG GP2M004A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A < 2.4W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M004A065CG D-PAK GP2M004A065CG RoHS GP2M004A065PG I-PAK G
8.6. gp2m005a050xx.pdf Size:366K _globalpower
GP2M005A050HG GP2M005A050FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A <1.5 Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance Device Package Marking Remark GP2M005A050HG TO-220 GP2M005A050HG RoHS GP2M005A050FG TO-220F GP2M005A050FG RoHS Absolute
8.7. gp2m002a065xg.pdf Size:499K _globalpower
GP2M002A065CG GP2M002A065PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A < 4.6W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M002A065CG D-PAK GP2M002A065CG RoHS GP2M002A065PG I-PAK G
8.8. gp2m009a090ng.pdf Size:562K _globalpower
GP2M009A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 9A <1.4W Improved dv/dt capability Improved ESD performance RoHS compliant JEDEC Qualification Ordering Part Number Package Marking Remark GP2M009A090NG TO-3PN GP2M009A090NG RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 900 V Gate-
8.9. gp2m002a060xx.pdf Size:505K _globalpower
GP2M002A060CG GP2M002A060PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 2.0A < 4.0W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M002A060CG D-PAK GP2M002A060CG RoHS GP2M002A060PG I-PAK GP2
8.10. gp2m007a065xg.pdf Size:416K _globalpower
GP2M007A065HG GP2M007A065FG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 6.5A <1.4 Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance Device Package Marking Remark GP2M007A065HG TO-220 GP2M007A065HG RoHS GP2M007A065FG TO-220F GP2M007A065FG RoHS Absolut
8.11. gp2m005a060xxx.pdf Size:507K _globalpower
GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A < 2.1W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M005A060CG D-PAK GP2M005A060CG RoHS GP2M005A060PG/GP2M00
8.12. gp2m007a080f.pdf Size:242K _globalpower
GP2M007A080F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge Improved dv/dt capability 800V 7A <1.9 RoHS compliant JEDEC Qualification TO-220F Top view Ordering Part Number Package Marking Remark GP2M007A080F TO-220F TMPF7N80A RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGS ±30 V T
8.13. gp2m002a065xx.pdf Size:394K _globalpower
GP2M002A065HG GP2M002A065FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 1.8A < 4.6 Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance Device Package Marking Remark GP2M002A065HG TO-220 GP2M002A065HG RoHS GP2M002A065FG TO-220F GP2M002A065FG RoHS Absolut
8.14. gp2m005a060xg.pdf Size:410K _globalpower
GP2M005A060HG GP2M005A060FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A < 2.1 Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance Device Package Marking Remark GP2M005A060HG TO-220 GP2M005A060HG RoHS GP2M005A060FG TO-220F GP2M005A060FG RoHS Absolu
8.15. gp2m004a065xx.pdf Size:395K _globalpower
GP2M004A065HG GP2M004A065FG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 650V 4.0A < 2.4 Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance Device Package Marking Remark GP2M004A065HG TO-220 GP2M004A065HG RoHS GP2M004A065FG TO-220F GP2M004A065FG RoHS Absolu
8.16. gp2m005a050xg.pdf Size:500K _globalpower
GP2M005A050CG GP2M005A050PG Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 4.5A < 1.5W Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M005A050CG D-PAK GP2M005A050CG RoHS GP2M005A050PG I-PAK G
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