All MOSFET. GP2M008A060XXX Datasheet

 

GP2M008A060XXX Datasheet and Replacement


   Type Designator: GP2M008A060XXX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-252 TO-251
      - MOSFET Cross-Reference Search

 

GP2M008A060XXX Datasheet (PDF)

 ..1. Size:522K  globalpower
 gp2m008a060xxx.pdf pdf_icon

GP2M008A060XXX

GP2M008A060CG GP2M008A060PG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 7.5A

 2.1. Size:398K  globalpower
 gp2m008a060xgx.pdf pdf_icon

GP2M008A060XXX

GP2M008A060HGGP2M008A060FG(H)FeaturesN-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested600V 7.5A

 8.1. Size:416K  globalpower
 gp2m007a065xg.pdf pdf_icon

GP2M008A060XXX

GP2M007A065HGGP2M007A065FGN-channel MOSFETFeatures Low gate chargeBVDSS ID RDS(on) 100% avalanche tested650V 6.5A

 8.2. Size:366K  globalpower
 gp2m005a050xx.pdf pdf_icon

GP2M008A060XXX

GP2M005A050HGGP2M005A050FGFeatures N-channel MOSFET Low gate chargeBVDSS ID RDS(on) 100% avalanche tested500V 4.5A

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SI7342DP | CS20N50ANH | IRLS4030 | AOT22N50 | HM3N80 | SE8209 | DMNH10H028SCT

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