All MOSFET. GP2M008A060XXX Datasheet

 

GP2M008A060XXX MOSFET. Datasheet pdf. Equivalent

Type Designator: GP2M008A060XXX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 23 nC

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO-252, TO-251

GP2M008A060XXX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M008A060XXX Datasheet (PDF)

0.1. gp2m008a060xxx.pdf Size:522K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M008A060CG GP2M008A060PG(H) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 7.5A <1.2W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M008A060CG/GP2M008A060PG D-PAK/I-PAK GP2M008A060CG/GP2M00

2.1. gp2m008a060xgx.pdf Size:398K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M008A060HG GP2M008A060FG(H) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 7.5A <1.2  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP1M008A050HG/GP1M008A050FG GP1M008A050HG/GP1M008A050FG TO-220 / TO-220F RoHS GP1M008

 8.1. gp2m004a060xx.pdf Size:419K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M004A060HG GP2M004A060FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.0A < 2.5  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M004A060HG TO-220 GP2M004A060HG RoHS GP2M004A060FG TO-220F GP2M004A060FG RoHS Absolu

8.2. gp2m009a090fg.pdf Size:240K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M009A090FG N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  Improved dv/dt capability 900V 9A <1.4  Improved ESD performance  RoHS compliant  JEDEC Qualification TO-220F Top view Ordering Part Number Package Marking Remark GP2M009A090FG TO-220F GP2M009A090FG RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 900

 8.3. gp2m002a060xg.pdf Size:405K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M002A060HG GP2M002A060FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 2.0A < 4.0  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M002A060HG TO-220 GP2M002A060HG RoHS GP2M002A060FG TO-220F GP2M002A060FG RoHS Absolu

8.4. gp2m004a060xg.pdf Size:514K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M004A060CG GP2M004A060PG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.0A < 2.5W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M004A060CG D-PAK GP2M004A060CG RoHS GP2M004A060PG I-PAK GP2

 8.5. gp2m004a065xg.pdf Size:503K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M004A065CG GP2M004A065PG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 650V 4.0A < 2.4W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M004A065CG D-PAK GP2M004A065CG RoHS GP2M004A065PG I-PAK G

8.6. gp2m005a050xx.pdf Size:366K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M005A050HG GP2M005A050FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 4.5A <1.5  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M005A050HG TO-220 GP2M005A050HG RoHS GP2M005A050FG TO-220F GP2M005A050FG RoHS Absolute

8.7. gp2m002a065xg.pdf Size:499K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M002A065CG GP2M002A065PG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 650V 1.8A < 4.6W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M002A065CG D-PAK GP2M002A065CG RoHS GP2M002A065PG I-PAK G

8.8. gp2m009a090ng.pdf Size:562K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M009A090NG N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 900V 9A <1.4W  Improved dv/dt capability  Improved ESD performance  RoHS compliant  JEDEC Qualification Ordering Part Number Package Marking Remark GP2M009A090NG TO-3PN GP2M009A090NG RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 900 V Gate-

8.9. gp2m002a060xx.pdf Size:505K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M002A060CG GP2M002A060PG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 2.0A < 4.0W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M002A060CG D-PAK GP2M002A060CG RoHS GP2M002A060PG I-PAK GP2

8.10. gp2m007a065xg.pdf Size:416K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M007A065HG GP2M007A065FG N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 650V 6.5A <1.4  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M007A065HG TO-220 GP2M007A065HG RoHS GP2M007A065FG TO-220F GP2M007A065FG RoHS Absolut

8.11. gp2m005a060xxx.pdf Size:507K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M005A060CG GP2M005A060PG(H) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M005A060CG D-PAK GP2M005A060CG RoHS GP2M005A060PG/GP2M00

8.12. gp2m007a080f.pdf Size:242K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M007A080F N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge  Improved dv/dt capability 800V 7A <1.9  RoHS compliant  JEDEC Qualification TO-220F Top view Ordering Part Number Package Marking Remark GP2M007A080F TO-220F TMPF7N80A RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGS ±30 V T

8.13. gp2m002a065xx.pdf Size:394K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M002A065HG GP2M002A065FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 650V 1.8A < 4.6  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M002A065HG TO-220 GP2M002A065HG RoHS GP2M002A065FG TO-220F GP2M002A065FG RoHS Absolut

8.14. gp2m005a060xg.pdf Size:410K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M005A060HG GP2M005A060FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M005A060HG TO-220 GP2M005A060HG RoHS GP2M005A060FG TO-220F GP2M005A060FG RoHS Absolu

8.15. gp2m004a065xx.pdf Size:395K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M004A065HG GP2M004A065FG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 650V 4.0A < 2.4  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark GP2M004A065HG TO-220 GP2M004A065HG RoHS GP2M004A065FG TO-220F GP2M004A065FG RoHS Absolu

8.16. gp2m005a050xg.pdf Size:500K _globalpower

GP2M008A060XXX
GP2M008A060XXX

GP2M005A050CG GP2M005A050PG Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 500V 4.5A < 1.5W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark GP2M005A050CG D-PAK GP2M005A050CG RoHS GP2M005A050PG I-PAK G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top