GP2M010A060X Specs and Replacement
Type Designator: GP2M010A060X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO-220 TO-220F
GP2M010A060X substitution
GP2M010A060X datasheet
gp2m010a060x.pdf
GP2M010A060H GP2M010A060F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 10A ... See More ⇒
gp2m010a065x.pdf
GP2M010A065H GP2M010A065F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A ... See More ⇒
gp2m012a080ng.pdf
GP2M012A080NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A ... See More ⇒
gp2m013a050f.pdf
GP2M013A050F N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 13A ... See More ⇒
Detailed specifications: GP2M005A060XG , GP2M005A060XXX , GP2M007A065XG , GP2M007A080F , GP2M008A060XGX , GP2M008A060XXX , GP2M009A090FG , GP2M009A090NG , AON6380 , GP2M010A065X , GP2M011A090NG , GP2M012A060X , GP2M012A080NG , GP2M013A050F , GP2M020A050N , GP2M020A050X , GP2M020A060N .
Keywords - GP2M010A060X MOSFET specs
GP2M010A060X cross reference
GP2M010A060X equivalent finder
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GP2M010A060X substitution
GP2M010A060X replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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