All MOSFET. GP2M010A060X Datasheet

 

GP2M010A060X MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP2M010A060X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 198 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220 TO-220F

 GP2M010A060X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP2M010A060X Datasheet (PDF)

 ..1. Size:406K  globalpower
 gp2m010a060x.pdf

GP2M010A060X GP2M010A060X

GP2M010A060HGP2M010A060FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 10A

 4.1. Size:401K  globalpower
 gp2m010a065x.pdf

GP2M010A060X GP2M010A060X

GP2M010A065HGP2M010A065FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge650V 9.5A

 8.1. Size:570K  globalpower
 gp2m012a080ng.pdf

GP2M010A060X GP2M010A060X

GP2M012A080NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A

 8.2. Size:242K  globalpower
 gp2m013a050f.pdf

GP2M010A060X GP2M010A060X

GP2M013A050FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge500V 13A

 8.3. Size:574K  globalpower
 gp2m011a090ng.pdf

GP2M010A060X GP2M010A060X

GP2M011A090NG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 900V 11A

 8.4. Size:403K  globalpower
 gp2m012a060x.pdf

GP2M010A060X GP2M010A060X

GP2M012A060HGP2M012A060FN-channel MOSFETFeaturesBVDSS ID RDS(on) Low gate charge600V 12A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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