NDBA070N10B Datasheet. Specs and Replacement

Type Designator: NDBA070N10B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 840 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-263

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NDBA070N10B datasheet

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NDBA070N10B

NDBA070N10B Advance Information www.onsemi.com Power MOSFET 100V, 10.5m , 70A, N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 10.5 m @15V Low Gate Charge 100V 70A 12.4 m @10V High Speed Switching 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel D(2, 4) Specifications Absolut... See More ⇒

Detailed specifications: NDB610B, NDB610BE, NDB708AE, NDB708B, NDB708BE, NDB710AE, NDB710B, NDB710BE, 5N65, NDBA100N10B, NDBA170N06A, NDBA180N10B, NDD01N60, NDD02N40, NDD03N40Z, NDD03N80Z, NDD60N360U1

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