All MOSFET. NDBA070N10B Datasheet

 

NDBA070N10B MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDBA070N10B
   Marking Code: 070N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-263

 NDBA070N10B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDBA070N10B Datasheet (PDF)

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 ndba070n10b.pdf

NDBA070N10B NDBA070N10B

NDBA070N10B Advance Information www.onsemi.com Power MOSFET 100V, 10.5m, 70A, N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 10.5 m@15V Low Gate Charge 100V 70A 12.4 m@10V High Speed Switching 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel D(2, 4)Specifications Absolut

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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