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NDBA070N10B Specs and Replacement


   Type Designator: NDBA070N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-263
 

 NDBA070N10B substitution

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NDBA070N10B datasheet

 ..1. Size:396K  onsemi
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NDBA070N10B

NDBA070N10B Advance Information www.onsemi.com Power MOSFET 100V, 10.5m , 70A, N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 10.5 m @15V Low Gate Charge 100V 70A 12.4 m @10V High Speed Switching 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel D(2, 4) Specifications Absolut... See More ⇒

Detailed specifications: NDB610B , NDB610BE , NDB708AE , NDB708B , NDB708BE , NDB710AE , NDB710B , NDB710BE , 12N60 , NDBA100N10B , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 .

History: PTA20N50A | APM4301K | TSM6866DCA | 3SK74K | NTD4909N | PMZB290UN | IXTQ480P2

Keywords - NDBA070N10B MOSFET specs

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