All MOSFET. NDBA070N10B Datasheet

 

NDBA070N10B Datasheet and Replacement


   Type Designator: NDBA070N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-263
 

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NDBA070N10B Datasheet (PDF)

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NDBA070N10B

NDBA070N10B Advance Information www.onsemi.com Power MOSFET 100V, 10.5m, 70A, N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 10.5 m@15V Low Gate Charge 100V 70A 12.4 m@10V High Speed Switching 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel D(2, 4)Specifications Absolut

Datasheet: NDB610B , NDB610BE , NDB708AE , NDB708B , NDB708BE , NDB710AE , NDB710B , NDB710BE , 4N60 , NDBA100N10B , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 .

History: FCP850N80Z | SHD230704

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