NDDP010N25AZ Datasheet and Replacement
Type Designator: NDDP010N25AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: DPAK IPAK
NDDP010N25AZ substitution
NDDP010N25AZ Datasheet (PDF)
nddp010n25az.pdf
NDDP010N25AZ Power MOSFET www.onsemi.com 250V, 10A, 420m, N-Channel Features Electrical Connection High Speed Switching Low Gate Charge 2,4 ESD Diode-Protected Gate 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance 1. Gate Specifications 12. Drain 3. Source Absolute Maximum Ratings at Ta = 25C 4. Drain Parameter Symbol Value
Datasheet: NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 , NDD60N550U1 , NDD60N745U1 , NDD60N900U1 , NDDL01N60Z , CS150N03A8 , NDFP03N150C , NDFP03N150CG , NDFPD1N150C , NDFPD1N150CG , NDP410AE , NDP410B , NDP410BE , NDP605A .
History: HUF76409D3S
Keywords - NDDP010N25AZ MOSFET datasheet
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History: HUF76409D3S
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