NDDP010N25AZ MOSFET. Datasheet pdf. Equivalent
Type Designator: NDDP010N25AZ
Marking Code: 10N25AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 52 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 80 pF
Maximum Drain-Source On-State Resistance (Rds): 0.42 Ohm
Package: DPAK, IPAK
NDDP010N25AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDDP010N25AZ Datasheet (PDF)
0.1. nddp010n25az.pdf Size:379K _onsemi
NDDP010N25AZ Power MOSFET www.onsemi.com 250V, 10A, 420mΩ, N-Channel Features Electrical Connection High Speed Switching Low Gate Charge 2,4 ESD Diode-Protected Gate 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance 1. Gate Specifications 1 2. Drain 3. Source Absolute Maximum Ratings at Ta = 25C 4. Drain Parameter Symbol Value
Datasheet: SQD100N03-3M2L , SQD100N03-3M4 , SQD100N04-3M6 , SQD100N04-3M6L , SQD10N30-330H , SQD15N06-42L , SQD19P06-60L , SQD23N06-31L , IRF9530 , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , SQD40P10-40L , SQD45P03-12 .