NDDP010N25AZ Datasheet. Specs and Replacement

Type Designator: NDDP010N25AZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: DPAK IPAK

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NDDP010N25AZ datasheet

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NDDP010N25AZ

NDDP010N25AZ Power MOSFET www.onsemi.com 250V, 10A, 420m , N-Channel Features Electrical Connection High Speed Switching Low Gate Charge 2,4 ESD Diode-Protected Gate 100% Avalanche Tested Pb-Free, Halogen Free and RoHS Compliance 1. Gate Specifications 1 2. Drain 3. Source Absolute Maximum Ratings at Ta = 25 C 4. Drain Parameter Symbol Value... See More ⇒

Detailed specifications: NDD02N40, NDD03N40Z, NDD03N80Z, NDD60N360U1, NDD60N550U1, NDD60N745U1, NDD60N900U1, NDDL01N60Z, CS150N04A8, NDFP03N150C, NDFP03N150CG, NDFPD1N150C, NDFPD1N150CG, NDP410AE, NDP410B, NDP410BE, NDP605A

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