All MOSFET. NDDP010N25AZ Datasheet

 

NDDP010N25AZ MOSFET. Datasheet pdf. Equivalent

Type Designator: NDDP010N25AZ

Marking Code: 10N25AZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 52 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16 nC

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.42 Ohm

Package: DPAK, IPAK

NDDP010N25AZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDDP010N25AZ Datasheet (PDF)

0.1. nddp010n25az.pdf Size:379K _onsemi

NDDP010N25AZ NDDP010N25AZ

NDDP010N25AZ Power MOSFET www.onsemi.com 250V, 10A, 420mΩ, N-Channel Features Electrical Connection  High Speed Switching  Low Gate Charge 2,4  ESD Diode-Protected Gate  100% Avalanche Tested  Pb-Free, Halogen Free and RoHS Compliance 1. Gate Specifications 1 2. Drain 3. Source Absolute Maximum Ratings at Ta = 25C 4. Drain Parameter Symbol Value

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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