NDPL100N10BG Datasheet and Replacement
Type Designator: NDPL100N10BG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 385 nS
Cossⓘ - Output Capacitance: 1250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO-220
NDPL100N10BG Datasheet (PDF)
ndpl100n10b ndpl100n10bg.pdf

NDPL100N10B Power MOSFET www.onsemi.com 100V, 7.2m, 100A, N-Channel Features Low On-Resistance VDSS RDS(on) Max ID Max Low Gate Charge 7.2 m@15V High Speed Switching 100V 100A 8.7 m@10V 100% Avalanche Tested Pb-Free and RoHS Compliance Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25C 2Parameter Sy
ndpl180n10b ndpl180n10bg.pdf

NDPL180N10B Power MOSFET www.onsemi.com 100V, 3.0m, 180A, N-Channel VDSS RDS(on) Max ID MaxFeatures 3.0m@ 15V Ultra Low On-Resistance 100V 180A 3.5m@ 10V Low Gate Charge High Speed Switching 100% Avalanche Test Pb-Free and RoHS Compliance Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25C Unit
Datasheet: NDP708B , NDP708BE , NDP710AE , NDP710B , NDP710BE , NDPL070N10B , NDPL070N10BG , NDPL100N10B , IRF1405 , NDPL180N10B , NDPL180N10BG , NDS335N , NDS336P , NDS352P , NDS355N , NDS8410 , NDS9405 .
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