UTC7N65L Datasheet. Specs and Replacement

Type Designator: UTC7N65L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

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UTC7N65L datasheet

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UTC7N65L

UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications... See More ⇒

Detailed specifications: SUP85N03-07P, SUB85N03-07P, SVF4N60CAF, SVF4N60CAK, SVF4N60CAD, SVF4N60CAT, SVF4N60CAMN, SVF4N60CAMJ, STP75NF75, WFP75N08, IPU105N03LG, IPU64CN10NG, IPF039N03LG, IPF090N03LG, 7N80L-TA3-T, 7N80L-TF3-T, 7N80L-TF1-T

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