WFP75N08 Datasheet and Replacement
Type Designator: WFP75N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 173 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 225 nS
Cossⓘ - Output Capacitance: 940 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO-220
WFP75N08 substitution
WFP75N08 Datasheet (PDF)
wfp75n08.pdf
Wisdom SemiconductorWFP75N08N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (175C)3. Source General DescriptionTO-220This Power
Datasheet: SUB85N03-07P , SVF4N60CAF , SVF4N60CAK , SVF4N60CAD , SVF4N60CAT , SVF4N60CAMN , SVF4N60CAMJ , UTC7N65L , SKD502T , IPU105N03LG , IPU64CN10NG , IPF039N03LG , IPF090N03LG , 7N80L-TA3-T , 7N80L-TF3-T , 7N80L-TF1-T , 7N80L-TQ2-R .
History: STD5N52U
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History: STD5N52U
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