All MOSFET. IPF090N03LG Datasheet

 

IPF090N03LG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPF090N03LG

Marking Code: 090N03L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO252

IPF090N03LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPF090N03LG Datasheet (PDF)

0.1. ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf Size:538K _1

IPF090N03LG
IPF090N03LG

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS®3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 9 mΩ DS(on),max • Optimized technology for DC/DC converters I 40 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low

9.1. ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf Size:413K _infineon

IPF090N03LG
IPF090N03LG

IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA OptiMOS®2 Power-Transistor Product Summary Features V 25 V DS • Ideal for high-frequency dc/dc converters R (SMD version) 8.6 mΩ DS(on),max • Qualified according to JEDEC1) for target application I 50 A D • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Superior thermal resistance • 175 °C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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