IPI530N15N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI530N15N3
Marking Code: 530N15N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 68 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 8.7 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 80 pF
Maximum Drain-Source On-State Resistance (Rds): 0.053 Ohm
Package: TO-262
IPI530N15N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI530N15N3 Datasheet (PDF)
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·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤53mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
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SYMB Size:287K _inchange_semiconductor
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