IPI530N15N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPI530N15N3
Marking Code: 530N15N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 21 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 8.7 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO-262
IPI530N15N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPI530N15N3 Datasheet (PDF)
ipi530n15n3.pdf
isc N-Channel MOSFET Transistor IPI530N15N3FEATURESStatic drain-source on-resistance:RDS(on) 53mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
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IPB530N15N3 G IPD530N15N3 GIPI530N15N3 G IPP530N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 53 mW Excellent gate charge x R product (FOM)DS(on)ID 21 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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