TTK2837 Specs and Replacement
Type Designator: TTK2837
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
TTK2837 substitution
- MOSFET ⓘ Cross-Reference Search
TTK2837 datasheet
ttk2837.pdf
TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source on-resistance RDS(ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (VDS = 500 V) Enhancement mode Vth = 1.5 to 3.0 V (VDS = 10 V,... See More ⇒
Detailed specifications: PFP13N60 , PFF13N60 , QM3054M6 , SVD730D , SVD730F , SVD730T , TP0202T , TP0610K , 75N75 , UT70N03G , DG4N65-TO251 , DG4N65-TO252 , DG4N65-TO220 , DG4N65-TO220F , DG4N65-TO262 , HY3403D , HY3403U .
Keywords - TTK2837 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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