All MOSFET. HY3210B Datasheet

 

HY3210B Datasheet and Replacement


   Type Designator: HY3210B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 237 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 902 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO263
 

 HY3210B substitution

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HY3210B Datasheet (PDF)

 ..1. Size:4740K  1
 hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3210B

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

 ..2. Size:4740K  hymexa
 hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3210B

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

 ..3. Size:390K  hymexa
 hy3210p hy3210b.pdf pdf_icon

HY3210B

HY3210P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/120ARDS(ON)=6.8m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage C

 9.1. Size:1565K  1
 hy3215w.pdf pdf_icon

HY3210B

HY3215WN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/130ARDS(ON)=11.5m(typ.)@VGS =10V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailableS(RoHS Compliant)DGTO-247A-3LApplications Brushless Motor Drive Electric Power SteeringN Channel MOSFETOrdering and Marking InformationPackage CodeWW : T

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History: IRF7451 | MDP2N60TP

Keywords - HY3210B MOSFET datasheet

 HY3210B cross reference
 HY3210B equivalent finder
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