All MOSFET. JCS8N60C Datasheet


JCS8N60C MOSFET. Datasheet pdf. Equivalent

Type Designator: JCS8N60C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 147 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 54 nC

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO220C

JCS8N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search


JCS8N60C Datasheet (PDF)

0.1. jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf Size:616K _1


N RN-CHANNEL MOSFETJCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

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