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R6002END3 Spec and Replacement


   Type Designator: R6002END3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: TO252

 R6002END3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6002END3 Specs

 ..1. Size:1520K  1
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R6002END3

R6002END3 Datasheet Nch 600V 2A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 3.4 ID 1.7A PD 26W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching 4) Drive circuits can be simple 5) Parallel use is easy 6) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications ... See More ⇒

 ..2. Size:266K  inchange semiconductor
r6002end3.pdf pdf_icon

R6002END3

isc N-Channel MOSFET Transistor R6002END3 FEATURES Drain Current I =1.7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 3.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 6.1. Size:2825K  rohm
r6002end.pdf pdf_icon

R6002END3

R6002END Datasheet Nch 600V 2A Power MOSFET lOutline l CPT3 VDSS 600V RDS(on)(Max.) 3.4 ID 1.7A PD 20W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simpl... See More ⇒

Detailed specifications: AOB9N70 , AOTF29S50L , AOTF9N70L , AOW66412 , FMV60N190S2HF , JCS650C , JCS650F , JCS650S , IRFP250N , R6003KND3 , R6004JND3 , R6004JNJ , R6004JNX , R6006JND3 , R6006JNJ , R6006JNX , R6006KND3 .

Keywords - R6002END3 MOSFET specs

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