All MOSFET. R6002END3 Datasheet


R6002END3 MOSFET. Datasheet pdf. Equivalent

Type Designator: R6002END3

Marking Code: R6002E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 26 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 1.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 6.5 nC

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 3.4 Ohm

Package: TO252

R6002END3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


R6002END3 Datasheet (PDF)

0.1. r6002end3.pdf Size:1520K _1


R6002END3DatasheetNch 600V 2A Power MOSFETlOutlinel TO-252VDSS 600VRDS(on)(Max.) 3.4ID 1.7APD 26W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching4) Drive circuits can be simple5) Parallel use is easy6) Pb-free plating ; RoHS compliantlApplicationllPackaging specifications

0.2. r6002end3.pdf Size:266K _inchange_semiconductor


isc N-Channel MOSFET Transistor R6002END3FEATURESDrain Current I =1.7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 6.1. r6002end.pdf Size:2825K _rohm


R6002ENDDatasheetNch 600V 2A Power MOSFETlOutlinel CPT3VDSS 600VRDS(on)(Max.) 3.4 ID 1.7A PD 20W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Gate-source voltage (VGSS) guaranteed tobe 20V.4) Drive circuits can be simpl

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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