All MOSFET. R6002END3 Datasheet

 

R6002END3 Datasheet and Replacement


   Type Designator: R6002END3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: TO252
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R6002END3 Datasheet (PDF)

 ..1. Size:1520K  1
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R6002END3

R6002END3DatasheetNch 600V 2A Power MOSFETlOutlinel TO-252VDSS 600VRDS(on)(Max.) 3.4ID 1.7APD 26W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching4) Drive circuits can be simple5) Parallel use is easy6) Pb-free plating ; RoHS compliantlApplicationllPackaging specifications

 ..2. Size:266K  inchange semiconductor
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R6002END3

isc N-Channel MOSFET Transistor R6002END3FEATURESDrain Current I =1.7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 6.1. Size:2825K  rohm
 r6002end.pdf pdf_icon

R6002END3

R6002ENDDatasheetNch 600V 2A Power MOSFETlOutlinel CPT3VDSS 600VRDS(on)(Max.) 3.4 ID 1.7A PD 20W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Gate-source voltage (VGSS) guaranteed tobe 20V.4) Drive circuits can be simpl

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BSC022N03SG | IRLU9343PBF | 2SK3437 | BRCS4266SC | PA5D8JA | 15NM70L-TF34-T | VST012N06MS

Keywords - R6002END3 MOSFET datasheet

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