R6002END3 MOSFET. Datasheet pdf. Equivalent
Type Designator: R6002END3
Marking Code: R6002E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.5 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: TO252
R6002END3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6002END3 Datasheet (PDF)
r6002end3.pdf
R6002END3DatasheetNch 600V 2A Power MOSFETlOutlinel TO-252VDSS 600VRDS(on)(Max.) 3.4ID 1.7APD 26W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching4) Drive circuits can be simple5) Parallel use is easy6) Pb-free plating ; RoHS compliantlApplicationllPackaging specifications
r6002end3.pdf
isc N-Channel MOSFET Transistor R6002END3FEATURESDrain Current I =1.7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6002end.pdf
R6002ENDDatasheetNch 600V 2A Power MOSFETlOutlinel CPT3VDSS 600VRDS(on)(Max.) 3.4 ID 1.7A PD 20W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Gate-source voltage (VGSS) guaranteed tobe 20V.4) Drive circuits can be simpl
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CP666
History: CP666
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