R6003KND3 Datasheet. Specs and Replacement

Type Designator: R6003KND3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO252

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R6003KND3 datasheet

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R6003KND3

R6003KND3 Datasheet Nch 600V 3A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 1.5 ID 3A PD 44W lFeatures l lInner circuit l 1) Low on-resistance 2) Ulta fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Power Supp... See More ⇒

 ..2. Size:266K  inchange semiconductor
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R6003KND3

isc N-Channel MOSFET Transistor R6003KND3 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

Detailed specifications: AOTF29S50L, AOTF9N70L, AOW66412, FMV60N190S2HF, JCS650C, JCS650F, JCS650S, R6002END3, IRFP250N, R6004JND3, R6004JNJ, R6004JNX, R6006JND3, R6006JNJ, R6006JNX, R6006KND3, R6006KNX

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.