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R6003KND3 PDF Specs and Replacement


   Type Designator: R6003KND3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252
 

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R6003KND3 PDF Specs

 ..1. Size:1405K  1
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R6003KND3

R6003KND3 Datasheet Nch 600V 3A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 1.5 ID 3A PD 44W lFeatures l lInner circuit l 1) Low on-resistance 2) Ulta fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Power Supp... See More ⇒

 ..2. Size:266K  inchange semiconductor
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R6003KND3

isc N-Channel MOSFET Transistor R6003KND3 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

Detailed specifications: AOTF29S50L , AOTF9N70L , AOW66412 , FMV60N190S2HF , JCS650C , JCS650F , JCS650S , R6002END3 , IRF630 , R6004JND3 , R6004JNJ , R6004JNX , R6006JND3 , R6006JNJ , R6006JNX , R6006KND3 , R6006KNX .

Keywords - R6003KND3 MOSFET specs

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