All MOSFET. RJ1G12BGN Datasheet


RJ1G12BGN MOSFET. Datasheet pdf. Equivalent

Type Designator: RJ1G12BGN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 178 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 165 nC

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 1900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.00186 Ohm

Package: TO-263

RJ1G12BGN Transistor Equivalent Substitute - MOSFET Cross-Reference Search


RJ1G12BGN Datasheet (PDF)

0.1. rj1g12bgn.pdf Size:1514K _rohm


RJ1G12BGNDatasheetNch 40V 120A Power MOSFETlOutlinel TO-263ABVDSS 40VRDS(on)(Max.)1.86m LPT(L)ID120APD 178W lFeaturesllInner circuitl1) Low on - resistance2) High power small mold package(LPTL)3) Pb-free lead plating ; RoHS compliant4) Halogen free5) 100% UIS testedlApplicationl

0.2. rj1g12bgn.pdf Size:254K _inchange_semiconductor


isc N-Channel MOSFET Transistor RJ1G12BGNFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.86m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur


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