RJ1G12BGN PDF Specs and Replacement
Type Designator: RJ1G12BGN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 1900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00186 Ohm
Package: TO-263
RJ1G12BGN substitution
RJ1G12BGN PDF Specs
rj1g12bgn.pdf
RJ1G12BGN Datasheet Nch 40V 120A Power MOSFET lOutline l TO-263AB VDSS 40V RDS(on)(Max.) 1.86m LPT(L) ID 120A PD 178W lFeatures l lInner circuit l 1) Low on - resistance 2) High power small mold package (LPTL) 3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% UIS tested lApplication l ... See More ⇒
rj1g12bgn.pdf
isc N-Channel MOSFET Transistor RJ1G12BGN FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 1.86m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
Detailed specifications: R6535ENZ , R6535ENZ1 , R6535KNZ , R6535KNZ1 , R8002ANJ , R8005ANJ , R8008ANJ , RJ1G08CGN , 10N65 , R6020KNZ4 , DJR0417 , R6035KNZ , R6035KNZ1 , R6047MNZ1 , R6547ENZ1 , R6547KNZ1 , R6576ENZ1 .
History: 2SJ329
Keywords - RJ1G12BGN MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SJ329
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