RJ1G12BGN Datasheet. Specs and Replacement

Type Designator: RJ1G12BGN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 1900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00186 Ohm

Package: TO-263

  📄📄 Copy 

RJ1G12BGN substitution

- MOSFET ⓘ Cross-Reference Search

 

RJ1G12BGN datasheet

 ..1. Size:1514K  rohm
 rj1g12bgn.pdf pdf_icon

RJ1G12BGN

RJ1G12BGN Datasheet Nch 40V 120A Power MOSFET lOutline l TO-263AB VDSS 40V RDS(on)(Max.) 1.86m LPT(L) ID 120A PD 178W lFeatures l lInner circuit l 1) Low on - resistance 2) High power small mold package (LPTL) 3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% UIS tested lApplication l ... See More ⇒

 ..2. Size:254K  inchange semiconductor
 rj1g12bgn.pdf pdf_icon

RJ1G12BGN

isc N-Channel MOSFET Transistor RJ1G12BGN FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 1.86m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

Detailed specifications: R6535ENZ, R6535ENZ1, R6535KNZ, R6535KNZ1, R8002ANJ, R8005ANJ, R8008ANJ, RJ1G08CGN, IRF2807, R6020KNZ4, DJR0417, R6035KNZ, R6035KNZ1, R6047MNZ1, R6547ENZ1, R6547KNZ1, R6576ENZ1

Keywords - RJ1G12BGN MOSFET specs

 RJ1G12BGN cross reference

 RJ1G12BGN equivalent finder

 RJ1G12BGN pdf lookup

 RJ1G12BGN substitution

 RJ1G12BGN replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.