All MOSFET. RJ1G12BGN Datasheet

 

RJ1G12BGN Datasheet and Replacement


   Type Designator: RJ1G12BGN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00186 Ohm
   Package: TO-263
 

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RJ1G12BGN Datasheet (PDF)

 ..1. Size:1514K  rohm
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RJ1G12BGN

RJ1G12BGNDatasheetNch 40V 120A Power MOSFETlOutlinel TO-263ABVDSS 40VRDS(on)(Max.)1.86m LPT(L)ID120APD 178W lFeaturesllInner circuitl1) Low on - resistance2) High power small mold package(LPTL)3) Pb-free lead plating ; RoHS compliant4) Halogen free5) 100% UIS testedlApplicationl

 ..2. Size:254K  inchange semiconductor
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RJ1G12BGN

isc N-Channel MOSFET Transistor RJ1G12BGNFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 1.86m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: R6535ENZ , R6535ENZ1 , R6535KNZ , R6535KNZ1 , R8002ANJ , R8005ANJ , R8008ANJ , RJ1G08CGN , STP80NF70 , R6020KNZ4 , DJR0417 , R6035KNZ , R6035KNZ1 , R6047MNZ1 , R6547ENZ1 , R6547KNZ1 , R6576ENZ1 .

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