AS60N20S Datasheet. Specs and Replacement

Type Designator: AS60N20S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: SOP-8

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AS60N20S datasheet

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AS60N20S

AS60N20S N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 4.5m @10V 60V 20A 5.4m @4.5V Feature Application Advanced trench process technology DC/DC Converter High Density Cell Design For Ultra Low Ideal for high-frequency switching and On-Resistance synchronous rectification Package Circuit diagram SOP-8 Marking D D D D 6020AS S S S G ... See More ⇒

Detailed specifications: AS3423, AS3434E, AS3442, AS3523, AS3621, AS4375, AS4435S, AS4606BS, 2N7002, AS8205M, AT10N60S, AF10N60S, AK10N60S, AG10N60S, AT10N65S, AF10N65S, AK10N65S

Keywords - AS60N20S MOSFET specs

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