All MOSFET. AS60N20S Datasheet

 

AS60N20S Datasheet and Replacement


   Type Designator: AS60N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: SOP-8
 

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AS60N20S Datasheet (PDF)

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AS60N20S

AS60N20S N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 4.5m@10V 60V 20A 5.4m@4.5V Feature Application Advanced trench process technology DC/DC Converter High Density Cell Design For Ultra Low Ideal for high-frequency switching and On-Resistance synchronous rectification Package Circuit diagram SOP-8 Marking D D D D 6020AS S S S G

Datasheet: AS3423 , AS3434E , AS3442 , AS3523 , AS3621 , AS4375 , AS4435S , AS4606BS , IRF640N , AS8205M , AT10N60S , AF10N60S , AK10N60S , AG10N60S , AT10N65S , AF10N65S , AK10N65S .

Keywords - AS60N20S MOSFET datasheet

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