AS60N20S MOSFET. Datasheet pdf. Equivalent
Type Designator: AS60N20S
Marking Code: 6020AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 680 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: SOP-8
AS60N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AS60N20S Datasheet (PDF)
..1. Size:1425K anbon
as60n20s.pdf
as60n20s.pdf
AS60N20S N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 4.5m@10V 60V 20A 5.4m@4.5V Feature Application Advanced trench process technology DC/DC Converter High Density Cell Design For Ultra Low Ideal for high-frequency switching and On-Resistance synchronous rectification Package Circuit diagram SOP-8 Marking D D D D 6020AS S S S G
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