AS60N20S Datasheet and Replacement
Type Designator: AS60N20S
Marking Code: 6020AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 67 nC
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 680 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: SOP-8
AS60N20S substitution
AS60N20S Datasheet (PDF)
as60n20s.pdf

AS60N20S N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 4.5m@10V 60V 20A 5.4m@4.5V Feature Application Advanced trench process technology DC/DC Converter High Density Cell Design For Ultra Low Ideal for high-frequency switching and On-Resistance synchronous rectification Package Circuit diagram SOP-8 Marking D D D D 6020AS S S S G
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SVD540D | AFN08N50T220T
Keywords - AS60N20S MOSFET datasheet
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History: SVD540D | AFN08N50T220T



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