All MOSFET. CS2N50DP Datasheet

 

CS2N50DP Datasheet and Replacement


   Type Designator: CS2N50DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-220
 

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CS2N50DP Datasheet (PDF)

 ..1. Size:452K  convert
 cs2n50df cs2n50dp cs2n50dd cs2n50du.pdf pdf_icon

CS2N50DP

CS2N50DF, CS2N50DP, nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N50DD,CS2N50DU500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N50D

 8.1. Size:357K  wuxi china
 cs2n50a4.pdf pdf_icon

CS2N50DP

Silicon N-Channel Power MOSFET R CS2N50 A4 General Description VDSS 500 V CS2N50 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ZXMP4A16K | BUK751R8-40E | 2SK757 | AOB412L | AOB286L | CS3N70HP | 2SK637

Keywords - CS2N50DP MOSFET datasheet

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