CS2N50DP MOSFET Datasheet: N-Ch, 500V, 2A. Full specification with pinout and replacement list

CS2N50DP Specs and Replacement

   Type Designator: CS2N50DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO-220

CS2N50DP substitution

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CS2N50DP datasheet

..1. Size:452K convert
cs2n50df cs2n50dp cs2n50dd cs2n50du.pdf pdf_icon

CS2N50DF, CS2N50DP, nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N50DD,CS2N50DU 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N50D... See More ⇒

8.1. Size:357K wuxi china
cs2n50a4.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS2N50 A4 General Description VDSS 500 V CS2N50 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

Detailed specifications: CS20N65V , CS20N65W , CS2N100F , CS2N100P , CS2N100U , CS2N100D , CS2N100LF , CS2N50DF , CS150N03A8 , CS2N50DD , CS2N50DU , CS2N60P , CS2N60U , CS2N60C , CS2N65F , CS2N65D , CS2N65U .