SSH22N50A Datasheet. Specs and Replacement

Type Designator: SSH22N50A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 465 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO3P

  📄📄 Copy 

SSH22N50A substitution

- MOSFET ⓘ Cross-Reference Search

 

SSH22N50A datasheet

 ..1. Size:220K  samsung
 ssh22n50a.pdf pdf_icon

SSH22N50A

SSH22N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.25 Rugged Gate Oxide Technology Lower Input Capacitance ID = 22 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.197 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒

Detailed specifications: SSH15N55A, SSH15N60, SSH15N60A, SSH17N60A, SSH20N45, SSH20N45A, SSH20N50, SSH20N50A, 8205A, SSH25N35, SSH25N35A, SSH25N40, SSH25N40A, SSH3N70, SSH3N70A, SSH40N15, SSH40N15A

Keywords - SSH22N50A MOSFET specs

 SSH22N50A cross reference

 SSH22N50A equivalent finder

 SSH22N50A pdf lookup

 SSH22N50A substitution

 SSH22N50A replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility