All MOSFET. SSH22N50A Datasheet

 

SSH22N50A Datasheet and Replacement


   Type Designator: SSH22N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 465 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO3P
 

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SSH22N50A Datasheet (PDF)

 ..1. Size:220K  samsung
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SSH22N50A

SSH22N50AAdvanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.25 Rugged Gate Oxide Technology Lower Input CapacitanceID = 22 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.197 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

Datasheet: SSH15N55A , SSH15N60 , SSH15N60A , SSH17N60A , SSH20N45 , SSH20N45A , SSH20N50 , SSH20N50A , IRF3710 , SSH25N35 , SSH25N35A , SSH25N40 , SSH25N40A , SSH3N70 , SSH3N70A , SSH40N15 , SSH40N15A .

History: IXTR90P20P

Keywords - SSH22N50A MOSFET datasheet

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