SSH22N50A MOSFET. Datasheet pdf. Equivalent
Type Designator: SSH22N50A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 278 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 182 nC
Drain-Source Capacitance (Cd): 3940 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: TO3P
SSH22N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSH22N50A Datasheet (PDF)
1.1. ssh22n50a.pdf 
Size:220K _samsung
SSH22N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.25 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 22 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.197 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character
Datasheet: SSH15N55A , SSH15N60 , SSH15N60A , SSH17N60A , SSH20N45 , SSH20N45A , SSH20N50 , SSH20N50A , BUZ11 , SSH25N35 , SSH25N35A , SSH25N40 , SSH25N40A , SSH3N70 , SSH3N70A , SSH40N15 , SSH40N15A .
