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CSFR12N60F Specs and Replacement


   Type Designator: CSFR12N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 161 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220F
 

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CSFR12N60F Specs

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CSFR12N60F

CSFR12N60F nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC) Device Marking and Package Information Device Package Mark... See More ⇒

Detailed specifications: CS9N90P , CS9N90W , CS9N90V , CS9N95F , CS9N95W , CSB08N6P5 , CSD03N6P3 , CSD08N6P5 , IRFZ44 , CSFR20N60F , CSFR2N60F , CSFR2N60P , CSFR2N60U , CSFR2N60D , CSFR3N60F , CSFR3N60P , CSFR3N60U .

Keywords - CSFR12N60F MOSFET specs

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