All MOSFET. CJBM3020 Datasheet

 

CJBM3020 Datasheet and Replacement


   Type Designator: CJBM3020
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8(max) nS
   Cossⓘ - Output Capacitance: 138 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFNWB3X3-8L-BE
 

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CJBM3020 Datasheet (PDF)

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CJBM3020

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB33-8L-BE Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBM3020 ID V(BR)DSS RDS(on)TYPD F NWB33-8L-BE8.5m@10V30 V 20A11.5m@4.5VDESCRIPTION The CJBM3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

Datasheet: CJBA3134K , CJBA3139K , CJBA3541K , CJBA7002K , CJBB3134K , CJBB3139K , CJBD3020 , CJBE5005 , IRLZ44N , CEC2088E , CEC3172 , CED20N02 , CEU20N02 , CED25N02 , CEU25N02 , CEM2192 , CEM4052 .

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