CJBM3020 Datasheet. Specs and Replacement

Type Designator: CJBM3020  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 max nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: DFNWB3X3-8L-BE

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CJBM3020 datasheet

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CJBM3020

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFNWB3 3-8L-BE Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBM3020 ID V(BR)DSS RDS(on)TYP D F NWB3 3-8L-BE 8.5m @10V 30 V 20A 11.5m @4.5V DESCRIPTION The CJBM3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE... See More ⇒

Detailed specifications: CJBA3134K, CJBA3139K, CJBA3541K, CJBA7002K, CJBB3134K, CJBB3139K, CJBD3020, CJBE5005, RFP50N06, CEC2088E, CEC3172, CED20N02, CEU20N02, CED25N02, CEU25N02, CEM2192, CEM4052

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