All MOSFET. CEU25N02 Datasheet

 

CEU25N02 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEU25N02

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 11 nC

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm

Package: TO252

CEU25N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEU25N02 Datasheet (PDF)

0.1. ced25n02 ceu25n02.pdf Size:272K _cet

CEU25N02
CEU25N02

CED25N02/CEU25N02N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 25A, RDS(ON) = 23m @VGS = 4.5V. RDS(ON) = 33m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PA

8.1. ceu25n15l ced25n15l.pdf Size:410K _cet

CEU25N02
CEU25N02

CED25N15L/CEU25N15LN-Channel Enhancement Mode Field Effect TransistorFEATURES150V, 25A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top