CEZ3P08 Datasheet. Specs and Replacement

Type Designator: CEZ3P08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 475 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PR-PACK5X6

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CEZ3P08 datasheet

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CEZ3P08

CEZ3P08 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -61A, RDS(ON) @VGS = -10V. = 9 m D D D D RDS(ON) = 13 m @VGS = -4.5V. 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 1 2 3 4 S S S G PR-PACK (5*6) ABSOLUTE MAXIMUM RATI... See More ⇒

 ..2. Size:364K  cet
 cez3p08.pdf pdf_icon

CEZ3P08

CEZ3P08 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -61A, RDS(ON) @VGS = -10V. = 9 m D D D D RDS(ON) = 13 m @VGS = -4.5V. 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 1 2 3 4 S S S G PR-PACK (5*6) ABSOLUTE MAXIMUM RATI... See More ⇒

Detailed specifications: CEM6056L, CEM9288, CEN2307A, CEN2321A, CEB6086, CEF9060N, CEB93A3, CES2322, STF13NM60N, CEZ3R04, CJCD2003, CJCD2004, CJCD2005, CJCD2007, CJDE8404, CJE3134K, CJE3139K

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