All MOSFET. CEZ3P08 Datasheet

 

CEZ3P08 Datasheet and Replacement


   Type Designator: CEZ3P08
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 54.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 475 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PR-PACK5X6
 

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CEZ3P08 Datasheet (PDF)

 ..1. Size:364K  1
 cez3p08.pdf pdf_icon

CEZ3P08

CEZ3P08P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -61A, RDS(ON) @VGS = -10V. = 9 mD D D D RDS(ON) = 13 m @VGS = -4.5V. 8 7 6 5Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.Surface mount Package.1 2 3 4 S S S GPR-PACK (5*6)ABSOLUTE MAXIMUM RATI

 ..2. Size:364K  cet
 cez3p08.pdf pdf_icon

CEZ3P08

CEZ3P08P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -61A, RDS(ON) @VGS = -10V. = 9 mD D D D RDS(ON) = 13 m @VGS = -4.5V. 8 7 6 5Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.Surface mount Package.1 2 3 4 S S S GPR-PACK (5*6)ABSOLUTE MAXIMUM RATI

Datasheet: CEM6056L , CEM9288 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , CES2322 , 2N60 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , CJDE8404 , CJE3134K , CJE3139K .

History: SUN830D

Keywords - CEZ3P08 MOSFET datasheet

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