CEZ3P08 Specs and Replacement
Type Designator: CEZ3P08
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 54.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 61 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 475 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PR-PACK5X6
CEZ3P08 substitution
CEZ3P08 Specs
cez3p08.pdf
CEZ3P08 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -61A, RDS(ON) @VGS = -10V. = 9 m D D D D RDS(ON) = 13 m @VGS = -4.5V. 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 1 2 3 4 S S S G PR-PACK (5*6) ABSOLUTE MAXIMUM RATI... See More ⇒
cez3p08.pdf
CEZ3P08 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -61A, RDS(ON) @VGS = -10V. = 9 m D D D D RDS(ON) = 13 m @VGS = -4.5V. 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 1 2 3 4 S S S G PR-PACK (5*6) ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: CEM6056L , CEM9288 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , CES2322 , SI2302 , CEZ3R04 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , CJDE8404 , CJE3134K , CJE3139K .
Keywords - CEZ3P08 MOSFET specs
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