All MOSFET. CEZ3P08 Datasheet

 

CEZ3P08 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEZ3P08

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 54.3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 61 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44 nC

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 475 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: PR-PACK5X6

CEZ3P08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEZ3P08 Datasheet (PDF)

0.1. cez3p08.pdf Size:364K _cet

CEZ3P08
CEZ3P08

CEZ3P08P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -61A, RDS(ON) @VGS = -10V. = 9 mD D D D RDS(ON) = 13 m @VGS = -4.5V. 8 7 6 5Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.Surface mount Package.1 2 3 4 S S S GPR-PACK (5*6)ABSOLUTE MAXIMUM RATI

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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