All MOSFET. CEZ3R04 Datasheet

 

CEZ3R04 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEZ3R04

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 39 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 65 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15.8 nC

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 320 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm

Package: PR-PACK5X6

CEZ3R04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEZ3R04 Datasheet (PDF)

0.1. cez3r04.pdf Size:408K _cet

CEZ3R04
CEZ3R04

CEZ3R04N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES30V, 65A, RDS(ON) = 5.8m @VGS = 10V.D D D D RDS(ON) = 8.5m @VGS = 4.5V. 8 7 6 5Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.Surface mount Package.1 2 3 4 S S S GPR-PACK (5*6)ABSOLUTE MAXIMUM RATINGS T

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