CEZ3R04 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEZ3R04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 39 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 65 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15.8 nC
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 320 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm
Package: PR-PACK5X6
CEZ3R04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEZ3R04 Datasheet (PDF)
0.1. cez3r04.pdf 
Size:408K _cet
CEZ3R04N-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES30V, 65A, RDS(ON) = 5.8m @VGS = 10V.D D D D RDS(ON) = 8.5m @VGS = 4.5V. 8 7 6 5Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.Surface mount Package.1 2 3 4 S S S GPR-PACK (5*6)ABSOLUTE MAXIMUM RATINGS T
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