CEZ3R04 Datasheet. Specs and Replacement

Type Designator: CEZ3R04  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: PR-PACK5X6

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CEZ3R04 datasheet

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CEZ3R04

CEZ3R04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 65A, RDS(ON) = 5.8m @VGS = 10V. D D D D RDS(ON) = 8.5m @VGS = 4.5V. 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 1 2 3 4 S S S G PR-PACK (5*6) ABSOLUTE MAXIMUM RATINGS T... See More ⇒

Detailed specifications: CEM9288, CEN2307A, CEN2321A, CEB6086, CEF9060N, CEB93A3, CES2322, CEZ3P08, 4N60, CJCD2003, CJCD2004, CJCD2005, CJCD2007, CJDE8404, CJE3134K, CJE3139K, CJFB30H20

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