CEZ3R04 Specs and Replacement
Type Designator: CEZ3R04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: PR-PACK5X6
CEZ3R04 substitution
- MOSFET ⓘ Cross-Reference Search
CEZ3R04 datasheet
cez3r04.pdf
CEZ3R04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 65A, RDS(ON) = 5.8m @VGS = 10V. D D D D RDS(ON) = 8.5m @VGS = 4.5V. 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. 1 2 3 4 S S S G PR-PACK (5*6) ABSOLUTE MAXIMUM RATINGS T... See More ⇒
Detailed specifications: CEM9288 , CEN2307A , CEN2321A , CEB6086 , CEF9060N , CEB93A3 , CES2322 , CEZ3P08 , AO3407 , CJCD2003 , CJCD2004 , CJCD2005 , CJCD2007 , CJDE8404 , CJE3134K , CJE3139K , CJFB30H20 .
History: H5N2801P
Keywords - CEZ3R04 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: H5N2801P
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