All MOSFET. SSH9N90A Datasheet

 

SSH9N90A MOSFET. Datasheet pdf. Equivalent

Type Designator: SSH9N90A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 280 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 127 nC

Drain-Source Capacitance (Cd): 2770 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO3P

SSH9N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSH9N90A Datasheet (PDF)

1.1. ssh9n90a.pdf Size:938K _samsung

SSH9N90A SSH9N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDS

5.1. ssh9n80a.pdf Size:936K _samsung

SSH9N90A SSH9N90A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

Datasheet: SSH7N80A , SSH7N90A , SSH80N06A , SSH8N55 , SSH8N60 , SSH8N80A , SSH8N90A , SSH9N80A , 2SK170 , SSI1N50A , SSI1N60A , SSI2N60A , SSI2N80A , SSI2N90A , SSI3N80A , SSI3N90A , SSI4N60A .

 

 
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