SSH9N90A Datasheet and Replacement
Type Designator: SSH9N90A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 245 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3P
SSH9N90A substitution
SSH9N90A Datasheet (PDF)
ssh9n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value Un
ssh9n80a.pdf

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
Datasheet: SSH7N80A , SSH7N90A , SSH80N06A , SSH8N55 , SSH8N60 , SSH8N80A , SSH8N90A , SSH9N80A , 13N50 , SSI1N50A , SSI1N60A , SSI2N60A , SSI2N80A , SSI2N90A , SSI3N80A , SSI3N90A , SSI4N60A .
History: 4401
Keywords - SSH9N90A MOSFET datasheet
SSH9N90A cross reference
SSH9N90A equivalent finder
SSH9N90A lookup
SSH9N90A substitution
SSH9N90A replacement
History: 4401



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