GT68N12T Datasheet. Specs and Replacement

Type Designator: GT68N12T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 778.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-220

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GT68N12T datasheet

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GT68N12T

GOFORD GT68N12 Description RDS(ON) GT68N12 use advanced technology to provide low VDSS ID @10V (typ) , R DS(ON) low gate charge, fast switching and s device characteristics. Thi excellent avalanche 120V m 5 110A is specially designed to get better ruggedness and suitable to use in motor control applications. General Features Low R & FOM DS(on) Ext... See More ⇒

Detailed specifications: GT125N10F, GT12N06S, GT130N03D5, GT15N10S, GT45N06, GT52N10D5, GT52N10T, GT55N06, IRFP460, GT68N12M, XM2N200, DMP3007SPS, DMP3013SFV, DMP3017SFGQ, DMP3036SFV, DMP3098LQ, DMP3125L

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