All MOSFET. GT68N12T Datasheet

 

GT68N12T MOSFET. Datasheet pdf. Equivalent


   Type Designator: GT68N12T
   Marking Code: GT68N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 192 W
   Maximum Drain-Source Voltage |Vds|: 120 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 110 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 68.9 nC
   Rise Time (tr): 33 nS
   Drain-Source Capacitance (Cd): 778.8 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
   Package: TO-220

 GT68N12T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GT68N12T Datasheet (PDF)

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 gt68n12m gt68n12t.pdf

GT68N12T GT68N12T

GOFORDGT68N12Description RDS(ON) GT68N12 use advanced technology to provide low VDSS ID @10V (typ) , R DS(ON) low gate charge, fast switching and s device characteristics. Thi excellent avalanche 120V m 5 110Ais specially designed to get better ruggednessand suitable to use in motor control applications.General Features Low R & FOM DS(on) Ext

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NCE80H11 | IPP037N06L3

 

 
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