GT68N12M Datasheet. Specs and Replacement

Type Designator: GT68N12M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 778.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-263

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GT68N12M datasheet

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GT68N12M

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Detailed specifications: GT12N06S, GT130N03D5, GT15N10S, GT45N06, GT52N10D5, GT52N10T, GT55N06, GT68N12T, IRF640, XM2N200, DMP3007SPS, DMP3013SFV, DMP3017SFGQ, DMP3036SFV, DMP3098LQ, DMP3125L, DMP32D5SFB

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