All MOSFET. GT68N12M Datasheet

 

GT68N12M Datasheet and Replacement


   Type Designator: GT68N12M
   Marking Code: GT68N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 68.9 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 778.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-263
 

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GT68N12M Datasheet (PDF)

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GT68N12M

GOFORDGT68N12Description RDS(ON) GT68N12 use advanced technology to provide low VDSS ID @10V (typ) , R DS(ON) low gate charge, fast switching and s device characteristics. Thi excellent avalanche 120V m 5 110Ais specially designed to get better ruggednessand suitable to use in motor control applications.General Features Low R & FOM DS(on) Ext

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History: IRF9540N

Keywords - GT68N12M MOSFET datasheet

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