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GT68N12M Specs and Replacement


   Type Designator: GT68N12M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 778.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-263
 

 GT68N12M substitution

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GT68N12M datasheet

 ..1. Size:3575K  goford
 gt68n12m gt68n12t.pdf pdf_icon

GT68N12M

GOFORD GT68N12 Description RDS(ON) GT68N12 use advanced technology to provide low VDSS ID @10V (typ) , R DS(ON) low gate charge, fast switching and s device characteristics. Thi excellent avalanche 120V m 5 110A is specially designed to get better ruggedness and suitable to use in motor control applications. General Features Low R & FOM DS(on) Ext... See More ⇒

Detailed specifications: GT12N06S , GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , IRF1404 , XM2N200 , DMP3007SPS , DMP3013SFV , DMP3017SFGQ , DMP3036SFV , DMP3098LQ , DMP3125L , DMP32D5SFB .

History: BRCS200N10SZC

Keywords - GT68N12M MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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