GT68N12M MOSFET. Datasheet pdf. Equivalent
Type Designator: GT68N12M
Marking Code: GT68N12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 192 W
Maximum Drain-Source Voltage |Vds|: 120 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 110 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 68.9 nC
Rise Time (tr): 33 nS
Drain-Source Capacitance (Cd): 778.8 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO-263
GT68N12M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT68N12M Datasheet (PDF)
0.1. gt68n12m gt68n12t.pdf 
Size:3575K _goford
GOFORDGT68N12Description RDS(ON) GT68N12 use advanced technology to provide low VDSS ID @10V (typ) , R DS(ON) low gate charge, fast switching and s device characteristics. Thi excellent avalanche 120V m 5 110Ais specially designed to get better ruggednessand suitable to use in motor control applications.General Features Low R & FOM DS(on) Ext
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