All MOSFET. GT68N12M Datasheet


GT68N12M MOSFET. Datasheet pdf. Equivalent

Type Designator: GT68N12M

Marking Code: GT68N12

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 192 W

Maximum Drain-Source Voltage |Vds|: 120 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 68.9 nC

Rise Time (tr): 33 nS

Drain-Source Capacitance (Cd): 778.8 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: TO-263

GT68N12M Transistor Equivalent Substitute - MOSFET Cross-Reference Search


GT68N12M Datasheet (PDF)

0.1. gt68n12m gt68n12t.pdf Size:3575K _goford


GOFORDGT68N12Description RDS(ON) GT68N12 use advanced technology to provide low VDSS ID @10V (typ) , R DS(ON) low gate charge, fast switching and s device characteristics. Thi excellent avalanche 120V m 5 110Ais specially designed to get better ruggednessand suitable to use in motor control applications.General Features Low R & FOM DS(on) Ext

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