GT68N12M MOSFET. Datasheet pdf. Equivalent
Type Designator: GT68N12M
Marking Code: GT68N12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 68.9 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 778.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-263
GT68N12M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT68N12M Datasheet (PDF)
..1. Size:3575K goford
gt68n12m gt68n12t.pdf
gt68n12m gt68n12t.pdf
GOFORDGT68N12Description RDS(ON) GT68N12 use advanced technology to provide low VDSS ID @10V (typ) , R DS(ON) low gate charge, fast switching and s device characteristics. Thi excellent avalanche 120V m 5 110Ais specially designed to get better ruggednessand suitable to use in motor control applications.General Features Low R & FOM DS(on) Ext
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