All MOSFET. EC8812 Datasheet

 

EC8812 MOSFET. Datasheet pdf. Equivalent


   Type Designator: EC8812
   Marking Code: 8812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23-6L

 EC8812 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EC8812 Datasheet (PDF)

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 ec8812.pdf

EC8812 EC8812

Eternal Semiconductor Inc.EC8812Dual N-Channel High Density Trench MOSFET (20V, 6.5A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max 16@ VGS = 4.5V, ID=6.5A20V 6.5A 17 @ VGS = 4.0V, ID=6A 24 @ VGS = 2.5V, ID=5.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package ESD Protected 1KV LeadPb-f

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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