All MOSFET. EC8812 Datasheet

 

EC8812 Datasheet and Replacement


   Type Designator: EC8812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23-6L
 

 EC8812 substitution

   - MOSFET ⓘ Cross-Reference Search

 

EC8812 Datasheet (PDF)

 ..1. Size:337K  eternal
 ec8812.pdf pdf_icon

EC8812

Eternal Semiconductor Inc.EC8812Dual N-Channel High Density Trench MOSFET (20V, 6.5A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max 16@ VGS = 4.5V, ID=6.5A20V 6.5A 17 @ VGS = 4.0V, ID=6A 24 @ VGS = 2.5V, ID=5.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package ESD Protected 1KV LeadPb-f

Datasheet: DMTH6010SCT , FCD260N65S3 , HLP5305 , ISCNL256N , ISP80N08S2L , NVD5C648NL , SUK3015 , EC4953 , 8205A , EM8810 , EN2300 , EN2301 , EN2305 , ES4812 , ES4953 , ES9435 , ES9926 .

History: TPM2030-3

Keywords - EC8812 MOSFET datasheet

 EC8812 cross reference
 EC8812 equivalent finder
 EC8812 lookup
 EC8812 substitution
 EC8812 replacement

 

 
Back to Top

 


 
.