EC8812 MOSFET Datasheet: N-Ch, 20V, 6.5A. Full specification with pinout and replacement list

EC8812 Specs and Replacement

   Type Designator: EC8812
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 210 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23-6L

EC8812 substitution

- MOSFET ⓘ Cross-Reference Search

EC8812 datasheet

..1. Size:337K eternal
ec8812.pdf pdf_icon

Eternal Semiconductor Inc. EC8812 Dual N-Channel High Density Trench MOSFET (20V, 6.5A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 16@ VGS = 4.5V, ID=6.5A 20V 6.5A 17 @ VGS = 4.0V, ID=6A 24 @ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package ESD Protected 1KV Lead Pb -f... See More ⇒

Detailed specifications: DMTH6010SCT , FCD260N65S3 , HLP5305 , ISCNL256N , ISP80N08S2L , NVD5C648NL , SUK3015 , EC4953 , IRFP260 , EM8810 , EN2300 , EN2301 , EN2305 , ES4812 , ES4953 , ES9435 , ES9926 .