EC8812 Datasheet. Specs and Replacement

Type Designator: EC8812  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT23-6L

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EC8812 datasheet

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EC8812

Eternal Semiconductor Inc. EC8812 Dual N-Channel High Density Trench MOSFET (20V, 6.5A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 16@ VGS = 4.5V, ID=6.5A 20V 6.5A 17 @ VGS = 4.0V, ID=6A 24 @ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package ESD Protected 1KV Lead Pb -f... See More ⇒

Detailed specifications: DMTH6010SCT, FCD260N65S3, HLP5305, ISCNL256N, ISP80N08S2L, NVD5C648NL, SUK3015, EC4953, 13N50, EM8810, EN2300, EN2301, EN2305, ES4812, ES4953, ES9435, ES9926

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