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SMF12N60 Specs and Replacement


   Type Designator: SMF12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

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SMF12N60 Specs

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SMF12N60

SMF12N60 600V N-Channnel MOSFET Features 12.0A, 600V, R =0.63 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Va... See More ⇒

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 smf12n65.pdf pdf_icon

SMF12N60

SMF12N65 650V N-Channnel MOSFET Features 12.0A, 650V, R =0.71 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Va... See More ⇒

Detailed specifications: HOA2303 , HOA2307 , SPN3006 , SMD2N65 , SMD4N65 , SMD7N65 , SMF10N60 , SMF10N65 , IRF740 , SMF12N65 , SMF14N65 , SMF16N65 , SMF20N65 , SMF2N60 , SMF2N65 , SMF4N60 , SMF4N65 .

Keywords - SMF12N60 MOSFET specs

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