SMF12N60 Datasheet. Specs and Replacement

Type Designator: SMF12N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 182 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

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SMF12N60 datasheet

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SMF12N60

SMF12N60 600V N-Channnel MOSFET Features 12.0A, 600V, R =0.63 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Va... See More ⇒

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SMF12N60

SMF12N65 650V N-Channnel MOSFET Features 12.0A, 650V, R =0.71 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Va... See More ⇒

Detailed specifications: HOA2303, HOA2307, SPN3006, SMD2N65, SMD4N65, SMD7N65, SMF10N60, SMF10N65, IRF840, SMF12N65, SMF14N65, SMF16N65, SMF20N65, SMF2N60, SMF2N65, SMF4N60, SMF4N65

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