SSR3055LA Datasheet. Specs and Replacement

Type Designator: SSR3055LA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm

Package: DPAK

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SSR3055LA datasheet

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SSR3055LA

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.15 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.097 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris... See More ⇒

Detailed specifications: SSP7N60A, SSP7N80A, SSP80N06A, SSR1N50, SSR1N50A, SSR1N60A, SSR2N60A, SSR3055A, IRFB4110, SSS10N60A, SSS1N50A, SSS1N60A, SSS2N60A, SSS2N80A, SSS2N90A, SSS3N80A, SSS3N90A

Keywords - SSR3055LA MOSFET specs

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