All MOSFET. HY1915B Datasheet

 

HY1915B Datasheet and Replacement


   Type Designator: HY1915B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 263 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 384 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO263
 

 HY1915B substitution

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HY1915B Datasheet (PDF)

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HY1915B

HY1915P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/85ARDS(ON)=15m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyMotor controlN-Channel MOSFETOrdering and Marking Infor

Datasheet: HY1908S , HY1908P , HY1908M , HY1908B , HY1908MF , HY1908PS , HY1908PM , HY1915P , IRFP250 , HY1920P , HY1920B , HY1920W , HY19P03D , HY19P03U , HY19P03V , HY19P03P , HY19P03B .

History: SI2328A

Keywords - HY1915B MOSFET datasheet

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