All MOSFET. HY1915B Datasheet

 

HY1915B Datasheet and Replacement


   Type Designator: HY1915B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 263 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 103 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 384 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO263
 

 HY1915B substitution

   - MOSFET ⓘ Cross-Reference Search

 

HY1915B Datasheet (PDF)

 ..1. Size:1684K  hymexa
 hy1915p hy1915b.pdf pdf_icon

HY1915B

HY1915P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/85ARDS(ON)=15m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyMotor controlN-Channel MOSFETOrdering and Marking Infor

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF5210L

Keywords - HY1915B MOSFET datasheet

 HY1915B cross reference
 HY1915B equivalent finder
 HY1915B lookup
 HY1915B substitution
 HY1915B replacement

 

 
Back to Top

 


 
.