HY1915B Datasheet. Specs and Replacement

Type Designator: HY1915B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 263 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 384 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO263

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HY1915B datasheet

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HY1915B

HY1915P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/85A RDS(ON)=15m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply Motor control N-Channel MOSFET Ordering and Marking Infor... See More ⇒

Detailed specifications: HY1908S, HY1908P, HY1908M, HY1908B, HY1908MF, HY1908PS, HY1908PM, HY1915P, AO4407A, HY1920P, HY1920B, HY1920W, HY19P03D, HY19P03U, HY19P03V, HY19P03P, HY19P03B

Keywords - HY1915B MOSFET specs

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