HY19P03U Datasheet. Specs and Replacement

Type Designator: HY19P03U  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 461 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO251

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HY19P03U datasheet

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 hy19p03d hy19p03u hy19p03v.pdf pdf_icon

HY19P03U

HY19P03 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -30V/-90A RDS(ON)= 4.8m (typ.)@VGS = 10V RDS(ON)= 6.5m (typ.)@VGS = 4.5V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management in DC/DC converter. P-Channel MOSFET Ordering a... See More ⇒

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 hy19p03p hy19p03b.pdf pdf_icon

HY19P03U

HY19P03P/B P-Channel Enhancement Mode MOSFET Feature Description Pin Description -30V/-90A RDS(ON)= 4.7m (typ.)@VGS =-10V RDS(ON)= 6.5m (typ.)@VGS =-4.5V S GD 100% avalanche tested Reliable and Rugged GDS Lead Free and Green Devices Available TO-220FB-3L TO-263-2L (RoHS Compliant) Applications Switching Application Power Management for DC/DC P-Channel MOSFET Ordering... See More ⇒

Detailed specifications: HY1908PS, HY1908PM, HY1915P, HY1915B, HY1920P, HY1920B, HY1920W, HY19P03D, CS150N04A8, HY19P03V, HY19P03P, HY19P03B, HY3003D, HY3003U, HY3003V, HY3008P, HY3008M

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