HY3010B Datasheet. Specs and Replacement

Type Designator: HY3010B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO263

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HY3010B datasheet

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HY3010B

HY3010P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/100A RDS(ON)=10m (typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Package Code ... See More ⇒

Detailed specifications: HY3003V, HY3008P, HY3008M, HY3008B, HY3008MF, HY3008PL, HY3008PM, HY3010P, HY1906P, HY3203C2, HY3208AP, HY3208AM, HY3208AB, HY3208APS, HY3208APM, HY3215P, HY3215M

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