HY3010B Specs and Replacement
Type Designator: HY3010B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO263
HY3010B substitution
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HY3010B datasheet
hy3010p hy3010b.pdf
HY3010P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/100A RDS(ON)=10m (typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Package Code ... See More ⇒
Detailed specifications: HY3003V , HY3008P , HY3008M , HY3008B , HY3008MF , HY3008PL , HY3008PM , HY3010P , STF13NM60N , HY3203C2 , HY3208AP , HY3208AM , HY3208AB , HY3208APS , HY3208APM , HY3215P , HY3215M .
Keywords - HY3010B MOSFET specs
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