HSH120N85 Datasheet. Specs and Replacement

Type Designator: HSH120N85  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO263

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HSH120N85 datasheet

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HSH120N85

HSH120N85 N-Ch 85V Fast Switching MOSFETs Description Product Summary VDS 85 V The HSH120N85 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the synchronous buck converter applications. ID 120 A The HSH120N85 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function ... See More ⇒

Detailed specifications: HSCE2530, HSCE2631, HSCE6032, HSCS2050, HSCS2052, HSD6004, HSD6016, HSF10N65, K4145, HSH150N04, HSH15810, HSH190N03, HSH200N02, HSH250N10, HSH3024, HSH6024A, HSH6040

Keywords - HSH120N85 MOSFET specs

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