HSH120N85 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSH120N85
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1050 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO263
HSH120N85 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSH120N85 Datasheet (PDF)
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hsh120n85.pdf
hsh120n85.pdf
HSH120N85 N-Ch 85V Fast Switching MOSFETs Description Product Summary VDS 85 V The HSH120N85 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the synchronous buck converter applications. ID 120 A The HSH120N85 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SVS20N60KD2
