All MOSFET. HSH120N85 Datasheet

 

HSH120N85 Datasheet and Replacement


   Type Designator: HSH120N85
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO263
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HSH120N85 Datasheet (PDF)

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HSH120N85

HSH120N85 N-Ch 85V Fast Switching MOSFETs Description Product Summary VDS 85 V The HSH120N85 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the synchronous buck converter applications. ID 120 A The HSH120N85 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N7380 | IRLU9343PBF | 2SK3437 | IXFK44N50 | IXTY90N055T2 | 15NM70L-TF34-T | VST012N06MS

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