All MOSFET. HSH120N85 Datasheet

 

HSH120N85 Datasheet and Replacement


   Type Designator: HSH120N85
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO263
 

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HSH120N85 Datasheet (PDF)

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HSH120N85

HSH120N85 N-Ch 85V Fast Switching MOSFETs Description Product Summary VDS 85 V The HSH120N85 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the synchronous buck converter applications. ID 120 A The HSH120N85 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: HSCE2530 , HSCE2631 , HSCE6032 , HSCS2050 , HSCS2052 , HSD6004 , HSD6016 , HSF10N65 , IRFB31N20D , HSH150N04 , HSH15810 , HSH190N03 , HSH200N02 , HSH250N10 , HSH3024 , HSH6024A , HSH6040 .

History: HSBB2627

Keywords - HSH120N85 MOSFET datasheet

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