All MOSFET. HSH120N85 Datasheet


HSH120N85 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSH120N85

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 220 W

Maximum Drain-Source Voltage |Vds|: 85 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 48 nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 1050 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: TO263

HSH120N85 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HSH120N85 Datasheet (PDF)

0.1. hsh120n85.pdf Size:1205K _huashuo


HSH120N85 N-Ch 85V Fast Switching MOSFETs Description Product Summary VDS 85 V The HSH120N85 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the synchronous buck converter applications. ID 120 A The HSH120N85 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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