HSM6113 Datasheet. Specs and Replacement

Type Designator: HSM6113  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.6 nS

Cossⓘ - Output Capacitance: 73 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOP8

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HSM6113 datasheet

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HSM6113

HSM6113 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSM6113 is the high cell density trenched P- VDS -60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 90 m converter applications. ID -4.1 A The HSM6113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia... See More ⇒

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HSM6113

HSM6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSM6115 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 25 m gate charge for most of the synchronous buck converter applications. ID -11 A The HSM6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli... See More ⇒

Detailed specifications: HSM4204, HSM4313, HSM4407, HSM4410, HSM4435, HSM4606, HSM4805, HSM6032, AON7408, HSM6115, HSM6303, HSM6901, HSM9926, HSO8205, HSO8810, HSP0016, HSP0018A

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