HSS0127 Datasheet and Replacement
Type Designator: HSS0127
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 29 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: SOT23
HSS0127 substitution
HSS0127 Datasheet (PDF)
hss0127.pdf

HSS0127 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSS0127 is the high cell density trenched P-VDS -100 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 650 m and efficiency for most of the small power switching and load switch applications. ID -0.9 A The HSS0127 meets the RoHS and Green Product requirement with full function reliability
Datasheet: HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , 13N50 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B , HSS2305A .
History: BUZ907P
Keywords - HSS0127 MOSFET datasheet
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History: BUZ907P



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