HSS0127 Datasheet. Specs and Replacement

Type Designator: HSS0127  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: SOT23

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HSS0127 datasheet

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HSS0127

HSS0127 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSS0127 is the high cell density trenched P- VDS -100 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 650 m and efficiency for most of the small power switching and load switch applications. ID -0.9 A The HSS0127 meets the RoHS and Green Product requirement with full function reliability ... See More ⇒

Detailed specifications: HSP6032A, HSP6040, HSP6048, HSP6115, HSP8004, HSP80P10, HSP8N50, HSS0008, TK10A60D, HSS1N20, HSS2012, HSS2300A, HSS2301B, HSS2301C, HSS2302A, HSS2302B, HSS2305A

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