HSS0127 MOSFET Datasheet: P-Ch, 100V, 0.9A. Full specification with pinout and replacement list

HSS0127 Specs and Replacement

   Type Designator: HSS0127
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: SOT23

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HSS0127 datasheet

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HSS0127 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSS0127 is the high cell density trenched P- VDS -100 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 650 m and efficiency for most of the small power switching and load switch applications. ID -0.9 A The HSS0127 meets the RoHS and Green Product requirement with full function reliability ... See More ⇒

Detailed specifications: HSP6032A , HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , 5N60 , HSS1N20 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B , HSS2305A .