All MOSFET. HSS0127 Datasheet


HSS0127 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSS0127

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 0.9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 4.5 nC

Rise Time (tr): 6.8 nS

Drain-Source Capacitance (Cd): 29 pF

Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm

Package: SOT23

HSS0127 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HSS0127 Datasheet (PDF)

0.1. hss0127.pdf Size:406K _huashuo


HSS0127 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSS0127 is the high cell density trenched P-VDS -100 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 650 m and efficiency for most of the small power switching and load switch applications. ID -0.9 A The HSS0127 meets the RoHS and Green Product requirement with full function reliability

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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