HSU80N03 Datasheet and Replacement
Type Designator: HSU80N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
HSU80N03 Datasheet (PDF)
hsu80n03.pdf

HSU80N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU80N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),TYP 4.9 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU80N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
Datasheet: HSU60N02 , HSU60P02 , HSU60P03 , HSU6113 , HSU6115 , HSU6901 , HSU6903 , HSU70P06 , AON7506 , HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , HSW6604 , HSW6800 , HSW6811 .
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