HSU80N03 Datasheet. Specs and Replacement

Type Designator: HSU80N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V

Qg ⓘ - Total Gate Charge: 84 nC

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

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HSU80N03 datasheet

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HSU80N03

HSU80N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU80N03 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),TYP 4.9 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU80N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒

Detailed specifications: HSU60N02, HSU60P02, HSU60P03, HSU6113, HSU6115, HSU6901, HSU6903, HSU70P06, AON7506, HSU90N02, HSU90N03, HSW2N15, HSW3415, HSW4602, HSW6604, HSW6800, HSW6811

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