All MOSFET. HSU80N03 Datasheet

 

HSU80N03 Datasheet and Replacement


   Type Designator: HSU80N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO252
 

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HSU80N03 Datasheet (PDF)

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HSU80N03

HSU80N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU80N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),TYP 4.9 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU80N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

Datasheet: HSU60N02 , HSU60P02 , HSU60P03 , HSU6113 , HSU6115 , HSU6901 , HSU6903 , HSU70P06 , IRF1407 , HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , HSW6604 , HSW6800 , HSW6811 .

History: IXTK140N20P | HSU6032

Keywords - HSU80N03 MOSFET datasheet

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