All MOSFET. HSW8810 Datasheet

 

HSW8810 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSW8810

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10.4 nC

Rise Time (tr): 9.8 nS

Drain-Source Capacitance (Cd): 66 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: SOT23-6

HSW8810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSW8810 Datasheet (PDF)

0.1. hsw8810.pdf Size:587K _huashuo

HSW8810
HSW8810

HSW8810 Dual N-Ch Fast Switching MOSFETs Description Product Summary VDS 20 V The HSW8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 20 m product is suitable for Lithium-ion battery pack applications. ID 6 A The HSW8810 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Availabl

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top