All MOSFET. HSW8810 Datasheet


HSW8810 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSW8810

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10.4 nC

Rise Time (tr): 9.8 nS

Drain-Source Capacitance (Cd): 66 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: SOT23-6

HSW8810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HSW8810 Datasheet (PDF)

0.1. hsw8810.pdf Size:587K _huashuo


HSW8810 Dual N-Ch Fast Switching MOSFETs Description Product Summary VDS 20 V The HSW8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 20 m product is suitable for Lithium-ion battery pack applications. ID 6 A The HSW8810 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Availabl

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