HSW8810 Datasheet. Specs and Replacement

Type Designator: HSW8810  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.8 nS

Cossⓘ - Output Capacitance: 66 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT23-6

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HSW8810 datasheet

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HSW8810

HSW8810 Dual N-Ch Fast Switching MOSFETs Description Product Summary VDS 20 V The HSW8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 20 m product is suitable for Lithium-ion battery pack applications. ID 6 A The HSW8810 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Availabl... See More ⇒

Detailed specifications: HSU90N03, HSW2N15, HSW3415, HSW4602, HSW6604, HSW6800, HSW6811, HSW8205, CS150N04A8, MMN1000DB010B, MMN200H010X, FTB07N08N, FTP02N04NA, RU20P7C-I, HX2300, HX2300A, SVF2N70MN

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