All MOSFET. HSW8810 Datasheet

 

HSW8810 Datasheet and Replacement


   Type Designator: HSW8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.8 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23-6
 

 HSW8810 substitution

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HSW8810 Datasheet (PDF)

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HSW8810

HSW8810 Dual N-Ch Fast Switching MOSFETs Description Product Summary VDS 20 V The HSW8810 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 20 m product is suitable for Lithium-ion battery pack applications. ID 6 A The HSW8810 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Availabl

Datasheet: HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , HSW6604 , HSW6800 , HSW6811 , HSW8205 , 18N50 , MMN1000DB010B , MMN200H010X , FTB07N08N , FTP02N04NA , RU20P7C-I , HX2300 , HX2300A , SVF2N70MN .

History: IRFD24N | BUK445-400B | IXTP44P15T | P1825HDB

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