IPB019N08N5 Datasheet and Replacement
Type Designator: IPB019N08N5
Marking Code: 019N08N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 224 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 99 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00195 Ohm
Package: TO263-7
IPB019N08N5 substitution
IPB019N08N5 Datasheet (PDF)
ipb019n08n5.pdf

IPB019N08N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec.tab Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 100% avalanche tested7 Pb-free plating; RoHS compliant Industrial qual
ipb019n08n3 ipb019n08n3g.pdf

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ipb019n06l3 ipb019n06l3g.pdf

pe % # ! F % (>.;?6?@%>EFeaturesD R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 1 m D n) m xR ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD 1 DR I46==6?E 82E6 492C86 I AC@5F4E ) ' D n)R /6CJ =@H @? C6D:DE2?46 ,D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D
ipb019n06l3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB019N06L3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPB160N04S2L-03
Keywords - IPB019N08N5 MOSFET datasheet
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History: IPB160N04S2L-03



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