All MOSFET. IPB019N08N5 Datasheet

 

IPB019N08N5 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB019N08N5

Marking Code: 019N08N5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 224 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.8 V

Maximum Drain Current |Id|: 180 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 99 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.00195 Ohm

Package: TO263-7

IPB019N08N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB019N08N5 Datasheet (PDF)

0.1. ipb019n08n5.pdf Size:1072K _infineon

IPB019N08N5
IPB019N08N5

IPB019N08N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec.tab Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 100% avalanche tested7 Pb-free plating; RoHS compliant Industrial qual

4.1. ipb019n08n3 ipb019n08n3g.pdf Size:689K _infineon

IPB019N08N5
IPB019N08N5

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 6.1. ipb019n06l3 ipb019n06l3g.pdf Size:541K _infineon

IPB019N08N5
IPB019N08N5

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6.2. ipb019n06l3.pdf Size:252K _inchange_semiconductor

IPB019N08N5
IPB019N08N5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB019N06L3FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXI

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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