All MOSFET. IPB17N25S3-100 Datasheet


IPB17N25S3-100 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB17N25S3-100

Marking Code: 3N25100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 107 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 3.7 nS

Drain-Source Capacitance (Cd): 480 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO263

IPB17N25S3-100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IPB17N25S3-100 Datasheet (PDF)

0.1. ipb17n25s3-100 ipp17n25s3-100.pdf Size:203K _infineon


IPB17N25S3-100IPP17N25S3-100OptiMOS-T Power-TransistorProduct SummaryVDS 250 VRDS(on),max 100mID 17 AFeaturesPG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB17N25S3-100 PG-TO263-3-2 3N2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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