IPB17N25S3-100 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB17N25S3-100
Marking Code: 3N25100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 107 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 14 nC
Rise Time (tr): 3.7 nS
Drain-Source Capacitance (Cd): 480 pF
Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
Package: TO263
IPB17N25S3-100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB17N25S3-100 Datasheet (PDF)
0.1. ipb17n25s3-100 ipp17n25s3-100.pdf 
Size:203K _infineon
IPB17N25S3-100IPP17N25S3-100OptiMOS-T Power-TransistorProduct SummaryVDS 250 VRDS(on),max 100mID 17 AFeaturesPG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB17N25S3-100 PG-TO263-3-2 3N2
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