All MOSFET. IPB17N25S3-100 Equivalents Search

 

IPB17N25S3-100 Specs and Replacement


   Type Designator: IPB17N25S3-100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.7 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO263
 

 IPB17N25S3-100 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPB17N25S3-100 Specs

 ..1. Size:203K  infineon
 ipb17n25s3-100 ipp17n25s3-100.pdf pdf_icon

IPB17N25S3-100

IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS(on),max 100 m ID 17 A Features PG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB17N25S3-100 PG-TO263-3-2 3N2... See More ⇒

Detailed specifications: IPB120N03S4L-03 , IPB120N04S4-04 , IPB120N04S4L-02 , IPB120N08S4-03 , IPB120N08S4-04 , IPB120P04P4-04 , IPB140N08S4-04 , IPB160N04S4L-H1 , IRF4905 , AUIRF1324L , AUIRF7734M2TR , AUIRF7749L2TR , AUIRF7759L2TR , AUIRF7769L2TR , AUIRF7799L2TR , AUIRF8736M2TR , AUIRF8739L2TR .

Keywords - IPB17N25S3-100 MOSFET specs

 IPB17N25S3-100 cross reference
 IPB17N25S3-100 equivalent finder
 IPB17N25S3-100 lookup
 IPB17N25S3-100 substitution
 IPB17N25S3-100 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.