IPB17N25S3-100 Datasheet and Replacement
Type Designator: IPB17N25S3-100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.7 nS
Cossⓘ - Output Capacitance: 480 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO263
IPB17N25S3-100 substitution
IPB17N25S3-100 Datasheet (PDF)
ipb17n25s3-100 ipp17n25s3-100.pdf

IPB17N25S3-100IPP17N25S3-100OptiMOS-T Power-TransistorProduct SummaryVDS 250 VRDS(on),max 100mID 17 AFeaturesPG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB17N25S3-100 PG-TO263-3-2 3N2
Datasheet: IPB120N03S4L-03 , IPB120N04S4-04 , IPB120N04S4L-02 , IPB120N08S4-03 , IPB120N08S4-04 , IPB120P04P4-04 , IPB140N08S4-04 , IPB160N04S4L-H1 , IRF4905 , AUIRF1324L , AUIRF7734M2TR , AUIRF7749L2TR , AUIRF7759L2TR , AUIRF7769L2TR , AUIRF7799L2TR , AUIRF8736M2TR , AUIRF8739L2TR .
History: NCES075R026T4 | FQI27N25TUF085 | STD6NM60N | MCQ4407 | FDMS8023S | BUK9Y4R8-60E | IRF9540NL
Keywords - IPB17N25S3-100 MOSFET datasheet
IPB17N25S3-100 cross reference
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IPB17N25S3-100 replacement
History: NCES075R026T4 | FQI27N25TUF085 | STD6NM60N | MCQ4407 | FDMS8023S | BUK9Y4R8-60E | IRF9540NL



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