IPB17N25S3-100 Datasheet. Specs and Replacement

Type Designator: IPB17N25S3-100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.7 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO263

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IPB17N25S3-100 datasheet

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IPB17N25S3-100

IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS(on),max 100 m ID 17 A Features PG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB17N25S3-100 PG-TO263-3-2 3N2... See More ⇒

Detailed specifications: IPB120N03S4L-03, IPB120N04S4-04, IPB120N04S4L-02, IPB120N08S4-03, IPB120N08S4-04, IPB120P04P4-04, IPB140N08S4-04, IPB160N04S4L-H1, IRFP064N, AUIRF1324L, AUIRF7734M2TR, AUIRF7749L2TR, AUIRF7759L2TR, AUIRF7769L2TR, AUIRF7799L2TR, AUIRF8736M2TR, AUIRF8739L2TR

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