All MOSFET. IPB17N25S3-100 Datasheet

 

IPB17N25S3-100 Datasheet and Replacement


   Type Designator: IPB17N25S3-100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.7 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO263
 

 IPB17N25S3-100 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPB17N25S3-100 Datasheet (PDF)

 ..1. Size:203K  infineon
 ipb17n25s3-100 ipp17n25s3-100.pdf pdf_icon

IPB17N25S3-100

IPB17N25S3-100IPP17N25S3-100OptiMOS-T Power-TransistorProduct SummaryVDS 250 VRDS(on),max 100mID 17 AFeaturesPG-TO263-3-2 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB17N25S3-100 PG-TO263-3-2 3N2

Datasheet: IPB120N03S4L-03 , IPB120N04S4-04 , IPB120N04S4L-02 , IPB120N08S4-03 , IPB120N08S4-04 , IPB120P04P4-04 , IPB140N08S4-04 , IPB160N04S4L-H1 , IRF4905 , AUIRF1324L , AUIRF7734M2TR , AUIRF7749L2TR , AUIRF7759L2TR , AUIRF7769L2TR , AUIRF7799L2TR , AUIRF8736M2TR , AUIRF8739L2TR .

Keywords - IPB17N25S3-100 MOSFET datasheet

 IPB17N25S3-100 cross reference
 IPB17N25S3-100 equivalent finder
 IPB17N25S3-100 lookup
 IPB17N25S3-100 substitution
 IPB17N25S3-100 replacement

 

 
Back to Top

 


 
.