IGT60R070D1 Datasheet. Specs and Replacement

Type Designator: IGT60R070D1  📄📄 

Type of Transistor: GaN

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: HSOF-8-3

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IGT60R070D1 datasheet

 ..1. Size:537K  infineon
 igt60r070d1.pdf pdf_icon

IGT60R070D1

IGT60R070D1 IGT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 Superior commutation ruggedness 1 Qualified for industrial applications according to JE... See More ⇒

 8.1. Size:544K  infineon
 igt60r190d1s.pdf pdf_icon

IGT60R070D1

IGT60R190D1S IGT60R190D1S 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching G No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 1 Superior commutation ruggedness 1 1 Qualified for standard grade application... See More ⇒

Detailed specifications: IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014, IAUZ18N10S5L420, IGLD60R070D1, IGLD60R190D1, IGO60R070D1, IGOT60R070D1, 75N75, IGT60R190D1S, IPA60R180P7S, IPA60R360P7S, IPAN60R180P7S, IPAN65R650CE, IPB015N04N6, IPB08CN10NG, IPB100N12S3-05

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