All MOSFET. IGT60R070D1 Datasheet

 

IGT60R070D1 Datasheet and Replacement


   Type Designator: IGT60R070D1
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: HSOF-8-3
 

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IGT60R070D1 Datasheet (PDF)

 ..1. Size:537K  infineon
 igt60r070d1.pdf pdf_icon

IGT60R070D1

IGT60R070D1IGT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 Superior commutation ruggedness 1 Qualified for industrial applications according to JE

 8.1. Size:544K  infineon
 igt60r190d1s.pdf pdf_icon

IGT60R070D1

IGT60R190D1S IGT60R190D1S 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching G No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 1 Superior commutation ruggedness 1 1 Qualified for standard grade application

Datasheet: IAUS200N08S5N023 , IAUS240N08S5N019 , IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , HY1906P , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE , IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 .

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