STD5N20T4 Datasheet. Specs and Replacement

Type Designator: STD5N20T4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: DPAK

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STD5N20T4 substitution

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STD5N20T4 datasheet

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STD5N20T4

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STD5N20T4

STD5N20L N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V ... See More ⇒

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STD5N20T4

STD5N20L N-CHANNEL 200V - 0.65 - 5A DPAK STripFET MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V ... See More ⇒

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STD5N20T4

STD5N20 N-CHANNEL 200V - 0.6 - 5A DPAK MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STD5N20 200 V ... See More ⇒

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Detailed specifications: STD3N30T4, STD3NA50-1, STD3NA50T4, STD4N25-1, STD4N25T4, STD4NA40-1, STD4NA40T4, STD5N20-1, IRLZ44N, STD6N10-1, STD6N10T4, STD8N06-1, STD8N06T4, STD8N10, STD8N10-1, STD8N10L, STD8N10L-1

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