STD5N20T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD5N20T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Drain-Source Capacitance (Cd): 600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.7 Ohm
Package: DPAK
STD5N20T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD5N20T4 Datasheet (PDF)
7.1. std5n20l.pdf 
Size:283K _st
STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 3 1 DESCRIPTION The STD5N20L utilizes the latest advanced de- sign rules of ST’s proprietary STripFET™ techno
7.2. std5n20lt4.pdf Size:268K _st
STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD5N20L 200 V < 0.7 Ω 5 A 33 W TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE LOW THRESHOLD DEVICE 3 1 DESCRIPTION The STD5N20L utilizes the latest advanced de- sign rules of ST’s proprietary STripFET™ techno
7.3. std5n20.pdf Size:254K _st
STD5N20 N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD5N20 200 V < 0.8 Ω 5 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 ADD SUFFIX “T4” FOR OREDERING IN TAPE & 1 REEL DPAK TO-252 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- INTERNAL S
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
