IQE006NE2LM5CG Specs and Replacement
Type Designator: IQE006NE2LM5CG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 1700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00065 Ohm
Package: TTFN-9-1
IQE006NE2LM5CG substitution
- MOSFET ⓘ Cross-Reference Search
IQE006NE2LM5CG datasheet
iqe006ne2lm5cg.pdf
IQE006NE2LM5CG MOSFET PG-TTFN-9-1 OptiMOSTM 5 Power-Transistor, 25 V 1 2 Features 3 4 Very low on-resistance R DS(on) 9 100% avalanche tested Superior thermal resistance N-channel, logic level Pb-free lead plating; RoHS compliant 8 7 Halogen-free according to IEC61249-2-21 6 5 Product validation Fully qualified according to JEDEC for Industrial Appl... See More ⇒
iqe006ne2lm5.pdf
IQE006NE2LM5 MOSFET PG-TSON-8-4 OptiMOSTM 5 Power-Transistor, 25 V Features 1 2 Very low on-resistance R @ V =4.5 V DS(on) GS 3 4 100% avalanche tested Superior thermal resistance N-channel 8 7 Pb-free lead plating; RoHS compliant 6 5 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applicat... See More ⇒
Detailed specifications: IPZ60R070P6 , IPZA60R037P7 , IPZA60R045P7 , IPZA60R060P7 , IPZA60R080P7 , IPZA60R120P7 , IPZA60R180P7 , IQE006NE2LM5 , IRFB31N20D , IRF1310NLPBF , IRF135SA204 , IRF150P220 , IRF150P221 , IRF200S234 , IRF3007LPBF , IRF300P226 , IRF3415LPBF .
History: AP18N20Y | SIHB22N60S | AP120P03D | SIHB24N65E | AP120N02D | AP160N10T
Keywords - IQE006NE2LM5CG MOSFET specs
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IQE006NE2LM5CG replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP18N20Y | SIHB22N60S | AP120P03D | SIHB24N65E | AP120N02D | AP160N10T
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