All MOSFET. IQE006NE2LM5CG Datasheet

 

IQE006NE2LM5CG Datasheet and Replacement


   Type Designator: IQE006NE2LM5CG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00065 Ohm
   Package: TTFN-9-1
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IQE006NE2LM5CG Datasheet (PDF)

 ..1. Size:1024K  infineon
 iqe006ne2lm5cg.pdf pdf_icon

IQE006NE2LM5CG

IQE006NE2LM5CGMOSFETPG-TTFN-9-1OptiMOSTM 5 Power-Transistor, 25 V12Features34 Very low on-resistance RDS(on)9 100% avalanche tested Superior thermal resistance N-channel, logic level Pb-free lead plating; RoHS compliant87 Halogen-free according to IEC61249-2-2165Product validationFully qualified according to JEDEC for Industrial Appl

 2.1. Size:1423K  infineon
 iqe006ne2lm5.pdf pdf_icon

IQE006NE2LM5CG

IQE006NE2LM5MOSFETPG-TSON-8-4OptiMOSTM 5 Power-Transistor, 25 VFeatures12 Very low on-resistance R @ V =4.5 VDS(on) GS34 100% avalanche tested Superior thermal resistance N-channel87 Pb-free lead plating; RoHS compliant65 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial Applicat

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PC015BD | SVF18N65PN | 17P10L-TA3-T | IRF6619 | 9N70 | 2N65KL-TN3-R | IXFA16N50P

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