IQE006NE2LM5CG Datasheet and Replacement
Type Designator: IQE006NE2LM5CG
Marking Code: 006E2C5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 61.7 nC
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 1700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00065 Ohm
Package: TTFN-9-1
IQE006NE2LM5CG substitution
IQE006NE2LM5CG Datasheet (PDF)
iqe006ne2lm5cg.pdf

IQE006NE2LM5CGMOSFETPG-TTFN-9-1OptiMOSTM 5 Power-Transistor, 25 V12Features34 Very low on-resistance RDS(on)9 100% avalanche tested Superior thermal resistance N-channel, logic level Pb-free lead plating; RoHS compliant87 Halogen-free according to IEC61249-2-2165Product validationFully qualified according to JEDEC for Industrial Appl
iqe006ne2lm5.pdf

IQE006NE2LM5MOSFETPG-TSON-8-4OptiMOSTM 5 Power-Transistor, 25 VFeatures12 Very low on-resistance R @ V =4.5 VDS(on) GS34 100% avalanche tested Superior thermal resistance N-channel87 Pb-free lead plating; RoHS compliant65 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial Applicat
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SM4022NSKP | IXFX150N30P3
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History: SM4022NSKP | IXFX150N30P3



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