JST150N30T2 Datasheet. Specs and Replacement
Type Designator: JST150N30T2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 735 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TO252
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JST150N30T2 substitution
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JST150N30T2 datasheet
jst150n30t2.pdf
JST150N30T2 30V,150A N-Channel Mosfet FEATURES TO-252 RDS(ON) 2.6m @VGS=10V RDS(ON) 3.4m @VGS=4.5V Simple Drive Requirement Low On-resistance MARKING N-CHANNEL MOSFET YYXX Absolute Maximum Ratings (T =25 unless otherwise specified) C Max. Symbol Parameter Units TO-252-4R V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS T = 25... See More ⇒
Detailed specifications: IRF7104PBF, IRF7105PBF, IRF7301PBF, JMTL2302A, JMTL3401A, JMTL3415K, G1L9N06, JST100N30T2, 7N65, JST180N30D5, JST2300, JST2301H, JST2302H, JST3400, JST3401, JST3415C, JST4406
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