JST150N30T2 Spec and Replacement
Type Designator: JST150N30T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 735 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: TO252
JST150N30T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JST150N30T2 Specs
jst150n30t2.pdf
JST150N30T2 30V,150A N-Channel Mosfet FEATURES TO-252 RDS(ON) 2.6m @VGS=10V RDS(ON) 3.4m @VGS=4.5V Simple Drive Requirement Low On-resistance MARKING N-CHANNEL MOSFET YYXX Absolute Maximum Ratings (T =25 unless otherwise specified) C Max. Symbol Parameter Units TO-252-4R V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS T = 25... See More ⇒
Detailed specifications: IRF7104PBF , IRF7105PBF , IRF7301PBF , JMTL2302A , JMTL3401A , JMTL3415K , G1L9N06 , JST100N30T2 , 7N65 , JST180N30D5 , JST2300 , JST2301H , JST2302H , JST3400 , JST3401 , JST3415C , JST4406 .
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