STH6N100 Datasheet. Specs and Replacement

Type Designator: STH6N100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 210 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO218

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STH6N100 datasheet

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STH6N100

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STH6N100

STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a H PAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH6N95K5-2 950 V 1.25 6 A 110 W Industry s lowest R x area DS(on) Industry s best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applicati... See More ⇒

Detailed specifications: STH5N90, STH5N90FI, STH60N10, STH60N10FI, STH65N05, STH65N05FI, STH65N06, STH65N06FI, 60N06, STH6N100FI, STH6NA80, STH6NA80FI, STH75N06, STH75N06FI, STH7N90, STH7N90FI, STH7NA60

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