All MOSFET. STK2NA60 Datasheet

 

STK2NA60 Datasheet and Replacement


   Type Designator: STK2NA60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT82
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STK2NA60 Datasheet (PDF)

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STK2NA60

STK2NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTK2NA60 600 V

 9.1. Size:184K  st
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STK2NA60

STK2N80N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK2N80 800 V

 9.2. Size:178K  st
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STK2NA60

STK2NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTK2NA60 600 V

 9.3. Size:316K  st
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STK2NA60

STK2N80N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTK2N80 800 V

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History: MTB12N03J3 | 2SK3089 | ASDM30P11TD-R | MTB60B06Q8 | IRF530NPBF | WSF20N20 | TPC8035-H

Keywords - STK2NA60 MOSFET datasheet

 STK2NA60 cross reference
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