All MOSFET. MCB160N10Y Datasheet

 

MCB160N10Y Datasheet and Replacement


   Type Designator: MCB160N10Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 223 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 818 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263
 

 MCB160N10Y substitution

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MCB160N10Y Datasheet (PDF)

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MCB160N10Y

MCB160N10YFeatures Split Gate Trench MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See O

Datasheet: MCAC20N15 , MCAC30N06Y , MCAC40N10YA , MCAC50N06Y , MCAC50N10Y , MCAC60N08Y , MCAC75N02 , MCAC80N045Y , IRF540N , MCG04N10A , MCG10P03 , MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 .

History: ZXMC3AMC | 2N7002X | SI3499DV | IRFIZ34GPBF | LSE65R180GF | NTZS3151PT1G

Keywords - MCB160N10Y MOSFET datasheet

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