All MOSFET. MCB160N10Y Datasheet

 

MCB160N10Y Datasheet and Replacement


   Type Designator: MCB160N10Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 223 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 818 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263
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MCB160N10Y Datasheet (PDF)

 ..1. Size:1286K  mcc
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MCB160N10Y

MCB160N10YFeatures Split Gate Trench MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See O

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History: CHM85A3PAGP | ALD1103DB | SQ9407EY-T1 | TK7P65W | SFFX054Z

Keywords - MCB160N10Y MOSFET datasheet

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