MCB160N10Y Datasheet. Specs and Replacement

Type Designator: MCB160N10Y  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 223 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 818 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

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MCB160N10Y datasheet

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MCB160N10Y

MCB160N10Y Features Split Gate Trench MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See O... See More ⇒

Detailed specifications: MCAC20N15, MCAC30N06Y, MCAC40N10YA, MCAC50N06Y, MCAC50N10Y, MCAC60N08Y, MCAC75N02, MCAC80N045Y, IRF1404, MCG04N10A, MCG10P03, MCG16N15, MCG20N08, MCG30N03, MCG30N03A, MCG40N03, MCG50N03

Keywords - MCB160N10Y MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs