All MOSFET. MCG20N08 Datasheet


MCG20N08 MOSFET. Datasheet pdf. Equivalent

Type Designator: MCG20N08

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20.8 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24 nC

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 202 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: DFN3333

MCG20N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MCG20N08 Datasheet (PDF)

0.1. mcg20n08.pdf Size:1184K _mcc


MCG20N08Features Split Gate Trench MOSFET Technology Low Thermal Resistance Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Available Upon Request By Adding Suffix "-HF" N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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