MCG20N08 Datasheet. Specs and Replacement

Type Designator: MCG20N08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 202 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFN3333

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MCG20N08 datasheet

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MCG20N08

MCG20N08 Features Split Gate Trench MOSFET Technology Low Thermal Resistance Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Available Upon Request By Adding Suffix "-HF" N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55 C to +150 ... See More ⇒

Detailed specifications: MCAC50N10Y, MCAC60N08Y, MCAC75N02, MCAC80N045Y, MCB160N10Y, MCG04N10A, MCG10P03, MCG16N15, IRFB4110, MCG30N03, MCG30N03A, MCG40N03, MCG50N03, MCMN2012, MCP07N65, MCP20N70, MCPF07N65

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