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MCG20N08 Spec and Replacement


   Type Designator: MCG20N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 202 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN3333

 MCG20N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCG20N08 Specs

 ..1. Size:1184K  mcc
 mcg20n08.pdf pdf_icon

MCG20N08

MCG20N08 Features Split Gate Trench MOSFET Technology Low Thermal Resistance Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Available Upon Request By Adding Suffix "-HF" N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55 C to +150 ... See More ⇒

Detailed specifications: MCAC50N10Y , MCAC60N08Y , MCAC75N02 , MCAC80N045Y , MCB160N10Y , MCG04N10A , MCG10P03 , MCG16N15 , IRFZ44 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , MCMN2012 , MCP07N65 , MCP20N70 , MCPF07N65 .

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