MCG50N03 Spec and Replacement
Type Designator: MCG50N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15.5 nS
Cossⓘ - Output Capacitance: 435 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DFN3333
MCG50N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCG50N03 Specs
mcg50n03.pdf
MCG50N03 Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Order... See More ⇒
Detailed specifications: MCB160N10Y , MCG04N10A , MCG10P03 , MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , IRFB4110 , MCMN2012 , MCP07N65 , MCP20N70 , MCPF07N65 , MCQ03N06 , MCQ15N10B , MCQ15N10Y , MCQ4407 .
History: SI4162DY
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