All MOSFET. MCG50N03 Datasheet


MCG50N03 MOSFET. Datasheet pdf. Equivalent

Type Designator: MCG50N03

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 52.8 nC

Rise Time (tr): 15.5 nS

Drain-Source Capacitance (Cd): 435 pF

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: DFN3333

MCG50N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


MCG50N03 Datasheet (PDF)

0.1. mcg50n03.pdf Size:513K _mcc


MCG50N03Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Order

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