MCG50N03 Datasheet. Specs and Replacement

Type Designator: MCG50N03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.5 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: DFN3333

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MCG50N03 datasheet

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MCG50N03

MCG50N03 Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Order... See More ⇒

Detailed specifications: MCB160N10Y, MCG04N10A, MCG10P03, MCG16N15, MCG20N08, MCG30N03, MCG30N03A, MCG40N03, 2N7002, MCMN2012, MCP07N65, MCP20N70, MCPF07N65, MCQ03N06, MCQ15N10B, MCQ15N10Y, MCQ4407

Keywords - MCG50N03 MOSFET specs

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