All MOSFET. MCG50N03 Datasheet

 

MCG50N03 Datasheet and Replacement


   Type Designator: MCG50N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 435 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN3333
 

 MCG50N03 substitution

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MCG50N03 Datasheet (PDF)

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MCG50N03

MCG50N03Features Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Order

Datasheet: MCB160N10Y , MCG04N10A , MCG10P03 , MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , IRF640N , MCMN2012 , MCP07N65 , MCP20N70 , MCPF07N65 , MCQ03N06 , MCQ15N10B , MCQ15N10Y , MCQ4407 .

History: 3SK192Q

Keywords - MCG50N03 MOSFET datasheet

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