All MOSFET. SI3415B Datasheet

 

SI3415B Datasheet and Replacement


   Type Designator: SI3415B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 219 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT23
 

 SI3415B substitution

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SI3415B Datasheet (PDF)

 ..1. Size:669K  mcc
 si3415b.pdf pdf_icon

SI3415B

SI3415BFeatures High Density Cell Design For Ultra Low RDS(on) High Speed SwitchingP-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET TechnologyEnhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH

 8.1. Size:610K  vishay
 si3415.pdf pdf_icon

SI3415B

 8.2. Size:1291K  mcc
 si3415a.pdf pdf_icon

SI3415B

SI3415AFeatures High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1)P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55oC to +150oC

 8.3. Size:430K  mcc
 si3415.pdf pdf_icon

SI3415B

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Datasheet: SI3134KL3 , SI3139KE , SI3139KL3 , SI3400A , SI3401A , SI3402 , SI3407 , SI3415A , 5N65 , SI3420A , SIL03N10 , SIL05N06 , SIL2300 , SIL2301 , SIL2308 , SIL2322A , SIL2623 .

History: IRF620A | IRF720S | QM2409V | QM3001D | FQB4P25TM | IRF1010NL | TPC8127

Keywords - SI3415B MOSFET datasheet

 SI3415B cross reference
 SI3415B equivalent finder
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