SI3415B Datasheet. Specs and Replacement

Type Designator: SI3415B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 219 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOT23

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SI3415B datasheet

 ..1. Size:669K  mcc
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SI3415B

SI3415B Features High Density Cell Design For Ultra Low RDS(on) High Speed Switching P-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET Technology Enhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH... See More ⇒

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SI3415B

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 8.2. Size:1291K  mcc
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SI3415B

SI3415A Features High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55oC to +150oC ... See More ⇒

 8.3. Size:430K  mcc
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SI3415B

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Detailed specifications: SI3134KL3, SI3139KE, SI3139KL3, SI3400A, SI3401A, SI3402, SI3407, SI3415A, IRF1407, SI3420A, SIL03N10, SIL05N06, SIL2300, SIL2301, SIL2308, SIL2322A, SIL2623

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