SI3415B Spec and Replacement
Type Designator: SI3415B
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 219 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SOT23
SI3415B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3415B Specs
si3415b.pdf
SI3415B Features High Density Cell Design For Ultra Low RDS(on) High Speed Switching P-Channel ESD Protected Up to 2.5KV (HBM) Trench Power LV MOSFET Technology Enhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoH... See More ⇒
si3415a.pdf
SI3415A Features High Power and Current Handing Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55oC to +150oC ... See More ⇒
Detailed specifications: SI3134KL3 , SI3139KE , SI3139KL3 , SI3400A , SI3401A , SI3402 , SI3407 , SI3415A , 2SK3568 , SI3420A , SIL03N10 , SIL05N06 , SIL2300 , SIL2301 , SIL2308 , SIL2322A , SIL2623 .
History: SIL2623
Keywords - SI3415B MOSFET specs
SI3415B cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SIL2623
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