PA910BD Datasheet. Specs and Replacement

Type Designator: PA910BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO252

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PA910BD datasheet

 ..1. Size:187K  niko-sem
 pa910bd.pdf pdf_icon

PA910BD

N-Channel Enhancement Mode PA910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 190m 8.1A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 8.1 Continuous Drain Cu... See More ⇒

 8.1. Size:212K  niko-sem
 pa910bm.pdf pdf_icon

PA910BD

N-Channel Enhancement Mode PA910BM NIKO-SEM SOT-23 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G GATE G 100V 190m 1.6A D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 1.6 Continuous Drain Current ID... See More ⇒

 8.2. Size:209K  niko-sem
 pa910bc.pdf pdf_icon

PA910BD

N-Channel Enhancement Mode PA910BC NIKO-SEM SOT-89 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1 2 3 100V 190m 2.9A 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 2.9 Continuous Drain Cur... See More ⇒

Detailed specifications: SIL2322A, SIL2623, SIL3400A, SIL3415, SIL3439K, SIL3724, P1025HDB, P1825HDB, IRF730, PK501BA, PK537BA, PK650DY, PKCH2BB, BSS123LT1G, BVSS123LT1G, EFC2J004NUZ, EFC2J013NUZ

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