All MOSFET. PA910BD Datasheet

 

PA910BD MOSFET. Datasheet pdf. Equivalent

Type Designator: PA910BD

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 8.1 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 8.6 nC

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 35 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO252

PA910BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA910BD Datasheet (PDF)

0.1. pa910bd.pdf Size:187K _niko-sem

PA910BD
PA910BD

N-Channel Enhancement Mode PA910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 190m 8.1A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 8.1 Continuous Drain Cu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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