PA910BD Spec and Replacement
Type Designator: PA910BD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id| ⓘ - Maximum Drain Current: 8.1 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 8.6 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO252
PA910BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PA910BD Specs
pa910bd.pdf
N-Channel Enhancement Mode PA910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 190m 8.1A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 8.1 Continuous Drain Cu... See More ⇒
pa910bm.pdf
N-Channel Enhancement Mode PA910BM NIKO-SEM SOT-23 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G GATE G 100V 190m 1.6A D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 1.6 Continuous Drain Current ID... See More ⇒
pa910bc.pdf
N-Channel Enhancement Mode PA910BC NIKO-SEM SOT-89 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1 2 3 100V 190m 2.9A 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 2.9 Continuous Drain Cur... See More ⇒
Detailed specifications: SIL2322A , SIL2623 , SIL3400A , SIL3415 , SIL3439K , SIL3724 , P1025HDB , P1825HDB , 75N75 , PK501BA , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , BVSS123LT1G , EFC2J004NUZ , EFC2J013NUZ .
Keywords - PA910BD MOSFET specs
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